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FGP30N6S2D

更新时间： 2024-09-08 22:29:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体二极管开关晶体管功率控制瞄准线双极性晶体管栅局域网
页数 文件大小 规格书
12页 275K
描述
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

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中文翻译

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FGP30N6S2D 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：unknown
风险等级：5.7其他特性：LOW CONDUCTION LOSS
最大集电极电流 (IC)：45 A集电极-发射极最大电压：600 V
配置：SINGLE WITH BUILT-IN DIODE最大降落时间（tf）：100 ns
门极发射器阈值电压最大值：5 V门极-发射极最大电压：20 V
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT APPLICABLE
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：167 W
认证状态：Not Qualified子类别：Insulated Gate BIP Transistors
表面贴装：NO端子面层：Matte Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT APPLICABLE晶体管应用：POWER CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：163 ns
标称接通时间 (ton)：28 nsBase Number Matches：1

FGP30N6S2D 数据手册

 浏览型号FGP30N6S2D的Datasheet PDF文件第2页浏览型号FGP30N6S2D的Datasheet PDF文件第3页浏览型号FGP30N6S2D的Datasheet PDF文件第4页浏览型号FGP30N6S2D的Datasheet PDF文件第5页浏览型号FGP30N6S2D的Datasheet PDF文件第6页浏览型号FGP30N6S2D的Datasheet PDF文件第7页 
July 2001  
FGH30N6S2D / FGP30N6S2D / FGB30N6S2D  
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode  
General Description  
Features  
The FGH30N6S2D, FGP30N6S2D, and FGB30N6S2D are  
Low Gate Charge, Low Plateau Voltage SMPS II IGBTs  
combining the fast switching speed of the SMPS IGBTs  
along with lower gate charge and plateau voltage and ava-  
lanche capability (UIS). These LGC devices shorten delay  
times, and reduce the power requirement of the gate drive.  
These devices are ideally suited for high voltage switched  
mode power supply applications where low conduction  
loss, fast switching times and UIS capability are essential.  
SMPS II LGC devices have been specially designed for:  
• 100kHz Operation at 390V, 14A  
• 200kHZ Operation at 390V, 9A  
• 600V Switching SOA Capability  
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC  
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V  
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical  
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ  
• Low Conduction Loss  
•
•
•
•
•
•
Power Factor Correction (PFC) circuits  
Full bridge topologies  
Half bridge topologies  
Push-Pull circuits  
Uninterruptible power supplies  
Zero voltage and zero current switching circuits  
IGBT formerly Developmental Type TA49336  
Diode formerly Developmental Type TA49390  
Package  
Symbol  
C
E
JEDEC STYLE TO-247  
JEDEC STYLE TO-220AB JEDEC STYLE TO-263AB  
C
E
G
C
G
G
C
G
E
E
Device Maximum Ratings T = 25°C unless otherwise noted  
C
Symbol  
BV  
Parameter  
Collector to Emitter Breakdown Voltage  
Collector Current Continuous, T = 25°C  
Ratings  
600  
Units  
V
A
A
A
V
V
CES  
I
45  
C25  
C
I
Collector Current Continuous, T = 110°C  
20  
C110  
C
I
Collector Current Pulsed (Note 1)  
Gate to Emitter Voltage Continuous  
Gate to Emitter Voltage Pulsed  
108  
CM  
V
±20  
GES  
GEM  
V
±30  
SSOA  
Switching Safe Operating Area at T = 150°C, Figure 2  
60A at 600V  
150  
J
E
Pulsed Avalanche Energy, I = 12A, L = 2mH, V = 50V  
mJ  
W
AS  
CE  
DD  
P
Power Dissipation Total T = 25°C  
167  
D
C
Power Dissipation Derating T > 25°C  
1.33  
W/°C  
°C  
C
T
Operating Junction Temperature Range  
Storage Junction Temperature Range  
-55 to 150  
-55 to 150  
J
T
°C  
STG  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and  
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTE:  
1. Pulse width limited by maximum junction temperature.  
©2001 Fairchild Semiconductor Corporation  
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A  
1234567...12

中文翻译

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FGP30N6S2D 替代型号

型号 品牌 替代类型 描述 数据表
HGTP12N60A4D FAIRCHILD

类似代替

 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
HGTP12N60A4D ONSEMI

功能相似

 600V，SMPS IGBT
HGTP12N60A4D INTERSIL

功能相似

 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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