Datasheet > FGP40N6S2

FGP40N6S2

更新时间： 2024-11-01 22:29:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关双极性晶体管
页数	文件大小	规格书
8页	173K
描述
600V, SMPS II Series N-Channel IGBT

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中文翻译

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FGP40N6S2 数据手册

August 2003

FGH40N6S2 / FGP40N6S2 / FGB40N6S2

600V, SMPS II Series N-Channel IGBT

General Description

Features

The FGH40N6S2, FGP40N6S2 and the FGB40N6S2 are

Low Gate Charge, Low Plateau Voltage SMPS II IGBTs

combining the fast switching speed of the SMPS IGBTs

along with lower gate charge, plateau voltage and ava-

lanche capability (UIS). These LGC devices shorten delay

times, and reduce the power requirement of the gate drive.

These devices are ideally suited for high voltage switched

mode power supply applications where low conduction

loss, fast switching times and UIS capability are essential.

SMPS II LGC devices have been specially designed for:

• 100kHz Operation at 390V, 24A

• 200kHZ Operation at 390V, 18A

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125 C

• Low Gate Charge . . . . . . . . . 35nC at V = 15V

• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical

• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 260mJ

• Low Conduction Loss

•

Power Factor Correction (PFC) circuits

Full bridge topologies

Half bridge topologies

Push-Pull circuits

Uninterruptible power supplies

Zero voltage and zero current switching circuits

IGBT (co-pack) formerly Developmental Type TA49438

Package

Symbol

TO-247

TO-220AB

TO-263AB

COLLECTOR

(Back-Metal)

COLLECTOR

(Flange)

Device Maximum Ratings T = 25°C unless otherwise noted

Symbol

Parameter

Collector to Emitter Breakdown Voltage

Collector Current Continuous, T = 25°C

Ratings

Units

600

CES

C25

Collector Current Continuous, T = 110°C

C110

Collector Current Pulsed (Note 1)

Gate to Emitter Voltage Continuous

Gate to Emitter Voltage Pulsed

180

±20

GES

GEM

±30

SSOA

Switching Safe Operating Area at T = 150°C, Figure 2

100A at 600V

260

Pulsed Avalanche Energy, I = 30A, L = 1mH, V = 50V

Power Dissipation Total T = 25°C

290

Power Dissipation Derating T > 25°C

2.33

W/°C

°C

Operating Junction Temperature Range

Storage Junction Temperature Range

-55 to 150

°C

STG

CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and

operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. Pulse width limited by maximum junction temperature.

FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5

12 3 4 5 6 7 8

中文翻译

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