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FGP50B-HE3/73 PDF预览

FGP50B-HE3/73

更新时间： 2024-09-14 15:32:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 80K
描述
DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE, ROHS COMPLIANT, PLASTIC, GP20, 2 PIN, Rectifier Diode

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中文翻译

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FGP50B-HE3/73 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：ROHS COMPLIANT, PLASTIC, GP20, 2 PIN
针数：2Reach Compliance Code：unknown
风险等级：5.7Base Number Matches：1

FGP50B-HE3/73 数据手册

 浏览型号FGP50B-HE3/73的Datasheet PDF文件第2页浏览型号FGP50B-HE3/73的Datasheet PDF文件第3页浏览型号FGP50B-HE3/73的Datasheet PDF文件第4页 
New Product  
FGP50B thru FGP50D  
Vishay General Semiconductor  
Glass Passivated Ultrafast Rectifier  
FEATURES  
• Superectifier structure for high reliability condition  
SUPERECTIFIER®  
• Cavity-free glass-passivated junction  
• Ultrafast reverse recovery time  
• Low forward voltage drop  
• Low leakage current  
• Low switching losses, high efficiency  
• High forward surge capability  
• Meets environmental standard MIL-S-19500  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
GP20  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
PRIMARY CHARACTERISTICS  
For use in high frequency rectification and freewheeling  
application in switching mode converters and inverters for  
consumer, computer, automotive and telecommunication.  
IF(AV)  
5.0 A  
VRRM  
IFSM  
trr  
100 V to 200 V  
135 A  
MECHANICAL DATA  
Case: GP20, molded epoxy over glass body  
35 ns  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
VF  
0.95 V  
IR  
5.0 μA  
TJ max.  
175 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
FGP50B  
100  
FGP50C  
150  
FGP50D  
200  
UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
V
V
V
VRMS  
70  
105  
140  
Maximum DC blocking voltage  
VDC  
100  
150  
200  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length (fig. 1)  
IF(AV)  
5.0  
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
135  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
°C  
Document Number: 88879  
Revision: 15-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234

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