Datasheet > FGP50C-HE3

FGP50C-HE3

更新时间： 2024-11-02 06:05:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	302K
描述
DIODE 5 A, 150 V, SILICON, RECTIFIER DIODE, LEAD FREE, PLASTIC, GP20, 2 PIN, Rectifier Diode

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中文翻译

获取价格

数据手册

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FGP50C-HE3 数据手册

FGP50B thru FGP50D

New Product

Vishay General Semiconductor

Glass Passivated Ultrafast Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

t_rr

5.0 A

100 V to 200 V

135 A

35 ns

V_F

0.95 V

I_R

5.0 µA

*Glass Encapsulation

GP20

T_jmax.

175 °C

technique is covered by

Patent No. 3,996,602,

brazed-lead assembly to

Patent No. 3,930,306

Features

Mechanical Data

• Cavity-free glass-passivated junction

• Ultrafast reverse recovery time

• Low forward voltage drop

Case: GP20, molded epoxy over glass body

Epoxy meets UL-94V-0 Flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• Low leakage current

• Low switching losses, high efficiency

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

For use in high frequency rectification and freewheel-

ing application in switching mode converters and

inverters for consumer, computer, automotive and

Telecommunication

Maximum Ratings

T_A= 25 °C unless otherwise specified

Parameter

Symbol

V_RRM

FGP50B

100

FGP50C

150

FGP50D

200

Unit

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RMS

V_DC

105

150

5.0

140

200

Maximum DC blocking voltage

100

Maximum average forward rectified current

0.375" (9.5 mm) lead length (Fig. 1)

I_F(AV)

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

135

Operating junction and storage temperature range

T_J, T_STG

- 65 to + 175

°C

Document Number 88879

10-Aug-05

www.vishay.com

12 3 4

中文翻译

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