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FGP30N6S2D_NL

更新时间： 2024-09-09 13:02:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体开关晶体管功率控制瞄准线双极性晶体管栅局域网
页数 文件大小 规格书
11页 260K
描述
Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE PACKAGE-3

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FGP30N6S2D_NL 技术参数

生命周期：Obsolete零件包装代码：TO-220AB
包装说明：FLANGE MOUNT, R-PSFM-T3针数：3
Reach Compliance Code：unknown风险等级：5.72
Is Samacsys：N其他特性：LOW CONDUCTION LOSS
最大集电极电流 (IC)：45 A集电极-发射极最大电压：600 V
配置：SINGLE WITH BUILT-IN DIODEJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT极性/信道类型：N-CHANNEL
认证状态：Not Qualified表面贴装：NO
端子面层：MATTE TIN端子形式：THROUGH-HOLE
端子位置：SINGLE晶体管应用：POWER CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：163 ns
标称接通时间 (ton)：28 nsBase Number Matches：1

FGP30N6S2D_NL 数据手册

 浏览型号FGP30N6S2D_NL的Datasheet PDF文件第2页浏览型号FGP30N6S2D_NL的Datasheet PDF文件第3页浏览型号FGP30N6S2D_NL的Datasheet PDF文件第4页浏览型号FGP30N6S2D_NL的Datasheet PDF文件第5页浏览型号FGP30N6S2D_NL的Datasheet PDF文件第6页浏览型号FGP30N6S2D_NL的Datasheet PDF文件第7页 
July 2001  
FGH30N6S2 / FGP30N6S2 / FGB30N6S2  
600V, SMPS II Series N-Channel IGBT  
General Description  
Features  
The FGH30N6S2, FGP30N6S2, and FGB30N6S2 are Low  
Gate Charge, Low Plateau Voltage SMPS II IGBTs combin-  
ing the fast switching speed of the SMPS IGBTs along with  
lower gate charge and plateau voltage and avalanche capa-  
bility (UIS). These LGC devices shorten delay times, and  
reduce the power requirement of the gate drive. These de-  
vices are ideally suited for high voltage switched mode pow-  
er supply applications where low conduction loss, fast  
switching times and UIS capability are essential. SMPS II  
LGC devices have been specially designed for:  
• 100kHz Operation at 390V, 14A  
• 200kHZ Operation at 390V, 9A  
• 600V Switching SOA Capability  
• Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC  
• Low Gate Charge . . . . . . . . . 23nC at VGE = 15V  
• Low Plateau Voltage . . . . . . . . . . . . .6.5V Typical  
• UIS Rated . . . . . . . . . . . . . . . . . . . . . . . . . 150mJ  
• Low Conduction Loss  
•
•
•
•
•
•
Power Factor Correction (PFC) circuits  
Full bridge topologies  
Half bridge topologies  
Push-Pull circuits  
Uninterruptible power supplies  
Zero voltage and zero current switching circuits  
Formerly Developmental Type TA49367.  
Symbol  
Package  
JEDEC STYLE TO-247  
JEDEC STYLE TO-220AB  
JEDEC STYLE TO-263AB  
C
E
C
E
C
G
G
C
G
G
E
E
Device Maximum Ratings T = 25°C unless otherwise noted  
C
Symbol  
BV  
Parameter  
Collector to Emitter Breakdown Voltage  
Collector Current Continuous, T = 25°C  
Ratings  
Units  
600  
45  
V
A
A
A
V
V
CES  
I
C25  
C
I
Collector Current Continuous, T = 110°C  
20  
C110  
C
I
Collector Current Pulsed (Note 1)  
Gate to Emitter Voltage Continuous  
Gate to Emitter Voltage Pulsed  
108  
CM  
V
±20  
GES  
GEM  
V
±30  
SSOA  
Switching Safe Operating Area at T = 150°C, Figure 2  
60A at 600V  
150  
J
E
Pulsed Avalanche Energy, I = 20A, L = 1.3mH, V = 50V  
mJ  
W
AS  
CE  
DD  
P
Power Dissipation Total T = 25°C  
167  
D
C
Power Dissipation Derating T > 25°C  
1.33  
W/°C  
°C  
C
T
Operating Junction Temperature Range  
Storage Junction Temperature Range  
-55 to 150  
-55 to 150  
J
T
°C  
STG  
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and  
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
NOTE:  
1. Pulse width limited by maximum junction temperature.  
©2001 Fairchild Semiconductor Corporation  
FGH30N6S2 / FGP30N6S2 / FGB30N6S2 Rev. A  
1234567...11

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