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FGH40N60SMDF PDF预览

FGH40N60SMDF

更新时间: 2024-09-29 10:32:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率控制双极性晶体管PC局域网
页数 文件大小 规格书
10页 369K
描述
600V, 40A Field Stop IGBT

FGH40N60SMDF 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-247
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:8.49
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:167308Samacsys Pin Count:3
Samacsys Part Category:Transistor IGBTSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-247 3L - TO-247,MOLDED,3 LEAD,JEDEC VARIATION ABSamacsys Released Date:2020-03-09 10:12:27
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):80 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE最大降落时间(tf):17 ns
门极发射器阈值电压最大值:6 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-247ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):349 W
认证状态:Not Qualified最大上升时间(tr):28 ns
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):132 ns标称接通时间 (ton):37 ns
Base Number Matches:1

FGH40N60SMDF 数据手册

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March 2011  
FGH40N60SMDF  
tm  
600V, 40A Field Stop IGBT  
Features  
General Description  
Maximum Junction Temperature : TJ =175oC  
Positive Temperaure Co-efficient for easy parallel operating  
High current capability  
Using Novel Field Stop IGBT Technology, Fairchild’s new series  
of Field Stop IGBTs offer the optimum performance for Solar  
Inverter, UPS, SMPS, IH and PFC applications where low con-  
duction and switching losses are essential.  
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC = 40A  
High input impedance  
Fast switching  
Tighten Parameter Distribution  
RoHS compliant  
Applications  
Solar Inverter, UPS, SMPS, PFC  
Induction Heating  
C
G
E
Absolute Maximum Ratings  
Symbol  
Description  
Ratings  
Units  
VCES  
VGES  
Collector to Emitter Voltage  
Gate to Emitter Voltage  
600  
± 20  
V
V
Collector Current  
@ TC = 25oC  
@ TC = 100oC  
80  
A
IC  
ICM (1)  
IF  
IFM (1)  
PD  
Collector Current  
40  
A
Pulsed Collector Current  
Diode Forward Current  
120  
A
@ TC = 25oC  
@ TC = 100oC  
40  
A
Diode Forward Current  
20  
A
Pulsed Diode Maximum Forward Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
120  
A
@ TC = 25oC  
@ TC = 100oC  
349  
W
W
oC  
oC  
174  
TJ  
-55 to +175  
-55 to +175  
Tstg  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
oC  
TL  
300  
Notes:  
1: Repetitive rating: Pulse width limited by max. junction temperature  
©2011 Fairchild Semiconductor Corporation  
FGH40N60SMDF Rev. B1  
1
www.fairchildsemi.com  

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