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FGH40N60SMD-F085 PDF预览

FGH40N60SMD-F085

更新时间： 2023-09-03 20:30:19
品牌 Logo 应用领域
安森美 - ONSEMI 局域网栅双极性晶体管功率控制
页数 文件大小 规格书
10页 371K
描述
IGBT，场截止，600 V，40 A，1.9 V

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中文翻译

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FGH40N60SMD-F085 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：not_compliant
风险等级：1.07外壳连接：COLLECTOR
最大集电极电流 (IC)：80 A集电极-发射极最大电压：600 V
配置：SINGLE WITH BUILT-IN DIODE最大降落时间（tf）：81 ns
门极发射器阈值电压最大值：6 V门极-发射极最大电压：20 V
JEDEC-95代码：TO-247ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：349 W
参考标准：AEC-Q101最大上升时间（tr）：36.4 ns
子类别：Insulated Gate BIP Transistors表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：POWER CONTROL晶体管元件材料：SILICON
标称断开时间 (toff)：172.5 ns标称接通时间 (ton)：43.7 ns
Base Number Matches：1

FGH40N60SMD-F085 数据手册

 浏览型号FGH40N60SMD-F085的Datasheet PDF文件第2页浏览型号FGH40N60SMD-F085的Datasheet PDF文件第3页浏览型号FGH40N60SMD-F085的Datasheet PDF文件第4页浏览型号FGH40N60SMD-F085的Datasheet PDF文件第5页浏览型号FGH40N60SMD-F085的Datasheet PDF文件第6页浏览型号FGH40N60SMD-F085的Datasheet PDF文件第7页 
IGBT - Field Stop  
600 V, 40 A  
FGH40N60SMD-F085  
Description  
Using Novel Field Stop IGBT Technology, ON Semiconductor’s  
new series of Field Stop IGBTs offer the optimum performance for  
Automotive Chargers, Inverter, and other applications where low  
conduction and switching losses are essential.  
www.onsemi.com  
Features  
C
• Maximum Junction Temperature: T = 175°C  
J
• Positive Temperature Co−efficient for Easy Parallel Operating  
• High Current Capability  
G
E
E
• Low Saturation Voltage: V  
• High Input Impedance  
= 1.9 V(Typ.) @ I = 40 A  
C
CE(sat)  
• Tightened Parameter Distribution  
• AEC Qualified and PPAP Capable  
IGBT: AEC−Q101  
• This Device is Pb−Free and is RoHS Compliant  
C
G
Applications  
• Automotive Chargers, Converters, High Voltage Auxiliaries  
• Inverters, SMPS, PFC, UPS  
ABSOLUTE MAXIMUM RATINGS  
TO−247−3LD  
CASE 340CK  
Rating  
Symbol  
Ratings  
600  
Unit  
V
Collector to Emitter Voltage  
Gate to Emitter Voltage  
V
CES  
V
GES  
20  
V
MARKING DIAGRAM  
Collector Current  
@ TC = 25°C  
I
C
A
80  
40  
@ TC = 100°C  
$Y&Z&3&K  
FGH40N60  
SMD  
Pulsed Collector Current  
I
120  
A
A
CM  
(Note 1)  
Diode Forward Current  
@ TC = 25°C  
I
F
40  
20  
@ TC = 100°C  
Pulsed Diode Maximum Forward  
Current  
I
120  
A
FM  
(Note 1)  
Maximum Power Dissipation  
@ TC = 25°C  
P
W
D
$Y  
&Z  
&3  
&K  
= ON Semiconductor Logo  
349  
174  
= Assembly Plant Code  
= Numeric Date Code  
= Lot Code  
@ TC = 100°C  
Operating Junction Temperature  
Storage Temperature Range  
T
−55 to +175  
−55 to +175  
300  
°C  
°C  
°C  
J
FGH40N60SMD  
= Specific Device Code  
T
stg  
Maximum Lead Temperature  
for Soldering, 1/8″ from Case  
for 5 Seconds  
T
L
ORDERING INFORMATION  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Repetitive rating: Pulse width limited by max. junction temperature.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
FGH40N60SMD−F085/D  
February, 2020 − Rev. 4  
 
1234567...10

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