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FGA30N65SMD PDF预览

FGA30N65SMD

更新时间: 2024-09-18 12:29:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
10页 337K
描述
650 V, 30 A Field Stop IGBT

FGA30N65SMD 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-3PN
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.7
最大集电极电流 (IC):60 A集电极-发射极最大电压:650 V
配置:SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值:6 V
门极-发射极最大电压:20 VJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):125 ns标称接通时间 (ton):41 ns
Base Number Matches:1

FGA30N65SMD 数据手册

 浏览型号FGA30N65SMD的Datasheet PDF文件第2页浏览型号FGA30N65SMD的Datasheet PDF文件第3页浏览型号FGA30N65SMD的Datasheet PDF文件第4页浏览型号FGA30N65SMD的Datasheet PDF文件第5页浏览型号FGA30N65SMD的Datasheet PDF文件第6页浏览型号FGA30N65SMD的Datasheet PDF文件第7页 
July 2013  
FGA30N65SMD  
650 V, 30 A Field Stop IGBT  
Features  
General Description  
Maximum Junction Temperature : TJ =175oC  
Positive Temperature Co-efficient for Easy Parallel Operating  
High Current Capability  
Using novel field stop IGBT technology, Fairchild®’s new series  
of field stop 2nd generation IGBTs offer the optimum perfor-  
mance for solar inverter, UPS, welder, induction heating, tele-  
com, ESS and PFC applications where low conduction and  
switching losses are essential.  
Low Saturation Voltage: VCE(sat) =1.98 V(Typ.) @ IC = 30 A  
Fast Switching  
Tighten Parameter Distribution  
RoHS Compliant  
Applications  
Solar Inverter, UPS, Welder, PFC, Induction Heating  
Telecom, ESS  
C
G
TO-3PN  
G C E  
E
Absolute Maximum Ratings  
Symbol  
Description  
Ratings  
Unit  
V
VCES  
Collector to Emitter Voltage  
Gate to Emitter Voltage  
650  
20  
V
VGES  
Transient Gate to Emitter Voltage  
Collector Current  
30  
V
@ TC = 25oC  
@ TC = 100oC  
60  
A
IC  
ICM (1)  
IF  
IFM (1)  
PD  
Collector Current  
30  
A
Pulsed Collector Current  
Diode Forward Current  
90  
A
@ TC = 25oC  
@ TC = 100oC  
40  
A
Diode Forward Current  
20  
A
Pulsed Diode Maximum Forward Current  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction Temperature  
Storage Temperature Range  
120  
A
@ TC = 25oC  
@ TC = 100oC  
300  
W
W
oC  
oC  
150  
TJ  
-55 to +175  
-55 to +175  
Tstg  
Maximum Lead Temp. for soldering  
Purposes, 1/8” from case for 5 seconds  
oC  
TL  
300  
Notes:  
1: Repetitive rating: Pulse width limited by max. junction temperature  
©2013 Fairchild Semiconductor Corporation  
FGA30N65SMD Rev. C2  
1
www.fairchildsemi.com  

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