生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | IN-LINE, R-PDIP-T14 | 针数: | 14 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.49 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 40 V |
配置: | SEPARATE, 4 ELEMENTS | 最小直流电流增益 (hFE): | 150 |
JESD-30 代码: | R-PDIP-T14 | JESD-609代码: | e0 |
元件数量: | 4 | 端子数量: | 14 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | 235 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | THROUGH-HOLE | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 175 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FF2484E | DIODES |
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Power Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, | |
FF2484E | ZETEX |
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Power Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, | |
FF2484J | ZETEX |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, | |
FF25R06KF | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 25A I(C) | M:HL080HD5.3 | |
FF25R06KF2 | ETC |
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TRANSISTOR | IGBT | N-CHAN | DUAL | 600V V(BR)CES | 25A I(C) | M:HL080HD5.3 | |
FF25R10K | ETC |
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TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 25A I(C) | MODULE-S | |
FF25R10KF2 | ETC |
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TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 25A I(C) | M:HL080HD5.3 | |
FF25R10KN | ETC |
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TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 25A I(C) | M:HL080HD5.3 | |
FF25R12KF | ETC |
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TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 25A I(C) | M:HL080HD5.3 | |
FF25R12KF2 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 25A I(C) | M:HL080HD5.3 |