Datasheet > FF300R06KE3_B2

FF300R06KE3_B2

更新时间： 2024-11-26 11:57:15

品牌	Logo	应用领域
EUPEC		二极管双极性晶体管
页数	文件大小	规格书
8页	286K
描述
62mm C-Serien module with trench/fieldstop IGBT3, EmCon3 diode and M5 power terminals

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FF300R06KE3_B2 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FF300R06KE3_B2

62mm C-Serien Modul mit Trench/Feldstop IGBT3, Emcon3 Diode und M5 Lastanschlüssen

62mm C-Serien module with trench/fieldstop IGBT3, EmCon3 diode and M5 power terminals

IGBT-Wechselrichter / IGBT-inverter

Vorläufige Daten / preliminary data

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

V†Š»

600

Kollektor-Dauergleichstrom

DC-collector current

T† = 70°C, TÝÎ = 175°C

T† = 25°C, TÝÎ = 175°C

I† ÒÓÑ

I†

300

400

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

t« = 1 ms

I†ç¢

PÚÓÚ

600

940

Gesamt-Verlustleistung

total power dissipation

T† = 25°C, TÝÎ = 175°C

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

+/-20

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 300 A, V•Š = 15 V

TÝÎ = 25°C

TÝÎ = 125°C V†Š ÙÈÚ

TÝÎ = 150°C

1,45 1,90

1,60

1,70

Gate-Schwellenspannung

gate threshold voltage

I† = 12,0 mA, V†Š = V•Š, TÝÎ = 25°C

V•Š = -15 V ... +15 V

V•ŠÚÌ

Q•

4,9

5,8

3,20

1,0

6,5

µC

Gateladung

gate charge

Interner Gatewiderstand

internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

CÍþÙ

CØþÙ

I†Š»

I•Š»

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 600 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

19,0

0,57

Rückwirkungskapazität

reverse transfer capacitance

Kollektor-Emitter Reststrom

collector-emitter cut-off current

5,0

Gate-Emitter Reststrom

gate-emitter leakage current

400

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 300 A, V†Š = 300 V

V•Š = ±15 V

R•ÓÒ = 2,4 Â

TÝÎ = 25°C

tÁ ÓÒ

0,11

0,12

0,13

µs

TÝÎ = 125°C

TÝÎ = 150°C

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 300 A, V†Š = 300 V

V•Š = ±15 V

R•ÓÒ = 2,4 Â

TÝÎ = 25°C

tØ

0,05

0,06

µs

TÝÎ = 125°C

TÝÎ = 150°C

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 300 A, V†Š = 300 V

V•Š = ±15 V

R•ÓËË = 2,4 Â

TÝÎ = 25°C

tÁ ÓËË

0,49

0,52

0,53

µs

TÝÎ = 125°C

TÝÎ = 150°C

Fallzeit (induktive Last)

fall time (inductive load)

I† = 300 A, V†Š = 300 V

V•Š = ±15 V

R•ÓËË = 2,4 Â

TÝÎ = 25°C

tË

0,05

0,07

µs

TÝÎ = 125°C

TÝÎ = 150°C

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 300 A, V†Š = 300 V

V•Š = ±15 V, L» = 30 nH

R•ÓÒ = 2,4 Â

TÝÎ = 25°C

TÝÎ = 125°C

TÝÎ = 150°C

EÓÒ

3,10

3,30

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 300 A, V†Š = 300 V

V•Š = ±15 V, L» = 30 nH

R•ÓËË = 2,4 Â

TÝÎ = 25°C

TÝÎ = 125°C

TÝÎ = 150°C

EÓËË

12,0

12,5

Kurzschlussverhalten

SC data

V•Š ù 15 V, V†† = 360 V

V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

t« ù 8 µs, TÝÎ = 25°C

t« ù 6 µs, TÝÎ = 150°C

2100

1500

I»†

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT

per IGBT

RÚÌœ†

RÚÌ†™

0,16 K/W

K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

pro IGBT / per IGBT

ð«ÈÙÚþ = 1 W/(m·K)

0,03

ðÃØþÈÙþ = 1 W/(m·K)

prepared by: Martin Knecht

date of publication: 2005-6-24

revision: 2.0

approved by: Wilhelm Rusche

12 3 4 5 6 7 8

中文翻译

下载PDF

与FF300R06KE3_B2相关器件

型号	品牌	获取价格	描述	数据表
FF300R06KE3B2HOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor
FF300R06KE3HOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE-7
FF300R06KF	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 600V V(BR)CES \| 300A I(C) \| MODULE-S
FF300R06KF3	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 600V V(BR)CES \| 300A I(C) \| M:HL093HW048
FF300R06KL	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 600V V(BR)CES \| 300A I(C) \| M:HL093HW048
FF300R06KL2	ETC	获取价格	TRANSISTOR \| IGBT POWER MODULE \| INDEPENDENT \| 600V V(BR)CES \| 300A I(C)
FF300R06ME3	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, MODULE-10
FF300R07KE4	INFINEON	获取价格	62mm C-Series module with trench/fieldstopp IGBT4 and Emitter Controlled Diode
FF300R07KE4HOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 365A I(C), 650V V(BR)CES, N-Channel, MODULE-7
FF300R07ME4	INFINEON	获取价格	Insulated Gate Bipolar Transistor,

与FF300R06KE3_B2相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

43
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

33
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

61
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

58

产品中心

服务支持

精选活动

关于我们

帮助中心

FF300R06KE3_B2

FF300R06KE3_B2 数据手册

与FF300R06KE3_B2相关器件

与FF300R06KE3_B2相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FF300R06KE3_B2

FF300R06KE3_B2 数据手册

与FF300R06KE3_B2相关器件

与FF300R06KE3_B2相关文章

您还可以找

您在本页遇到什么问题？