Datasheet > FDS86540

FDS86540

更新时间： 2022-04-07 13:38:06

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	262K
描述
N-Channel PowerTrenchÂ® MOSFET 60 V, 18 A, 4.5 mÎ©

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数据手册

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FDS86540 数据手册

Typical Characteristics T_J= 25 °C unless otherwise noted

10000

1000

100

C_iss

V_DD= 20 V

I_D= 18 A

V_DD= 30 V

C_oss

V_DD= 40 V

C_rss

f = 1 MHz

_GS= 0 V

0.1

V_DS, DRAIN TO SOURCE VOLTAGE (V)

Q_g, GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics

Figure8. C a p a c i t a n c e v s D r a i n

to Source Voltage

R_θJA= 50 ^oC/W

T_J= 25 ^o

V_GS= 10 V

T_J= 100 ^oC

V_GS= 8 V

T_J= 125 ^o

100

125

150

0.01

0.1

100 300

T_A, AMBIENT TEMPERATURE (^oC)

t_AV, TIME IN AVALANCHE (ms)

Figure9. U n c l a m p e d I n d u c t i v e

Switching Capability

Figure10. Maximum Continuous Drain

Current vs Ambient Temperature

200

100

2000

SINGLE PULSE

R_θJA= 125 ^oC/W

1000

100

_A= 25 ^oC

100 μs

1 ms

THIS AREA IS

LIMITED BY r

DS(on)

10 ms

100 ms

SINGLE PULSE

T_J= MAX RATED

0.1

0.01

1 s

_θJA= 125 ^oC/W

10 s

_A= 25 ^oC

0.5

10^-4

10^-3

10^-2

t, PULSE WIDTH (sec)

10^-1

100 1000

0.01

0.1

100 300

V_DS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe

Operating Area

Figure 12. Single Pulse Maximum

Power Dissipation

FDS86540 Rev. C

www.fairchildsemi.com

1 2 345 6

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