Datasheet > FDS6675BZ_08

FDS6675BZ_08

更新时间： 2024-11-12 04:18:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	458K
描述
P-Channel PowerTrench㈢ MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDS6675BZ_08 数据手册

July 2008

FDS6675BZ

P-Channel PowerTrench^®MOSFET

-30V, -11A, 13mΩ

General Description

Features

Max r_DS(on)=13mΩ at V_GS= -10V, I_D= -11A

Max r_DS(on)=21.8mΩ at V_GS= -4.5V, I_D= -9A

Extended V_GSrange (-25V) for battery applications

HBM ESD protection level of 5.4 KV typical (note 3)

This P-Channel MOSFET is producted using Fairchild

Semiconductor’s advanced PowerTrench process that has

been especially tailored to minimize the on-state

resistance.

This device is well suited for Power Management and load

switching applications common in Notebook Computers

and Portable Battery Packs.

High performance trench technology for extremely low

r_DS(on)

High power and current handing capability

RoHS Compliant

SO-8

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

-30

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Pulsed

±25

(Note 1a)

-11

I_D

-55

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

P_D

1.2

1.0

T_J, T_STG

Operating and Storage Temperature

-55 to 150

°C

Thermal Characteristics

R_θJA

R_θJC

Thermal Resistance , Junction to Ambient (Note 1a)

Thermal Resistance , Junction to Case (Note 1)

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

FDS6675BZ

13’’

12mm

2500 units

FDS6675BZ Rev. B1

www.fairchildsemi.com

12 3 4 5 6

中文翻译

下载PDF

与FDS6675BZ_08相关器件

型号	品牌	获取价格	描述	数据表
FDS6675D84Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-
FDS6675F011	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-
FDS6675S62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-
FDS6676	FAIRCHILD	获取价格	30V N-Channel PowerTrench MOSFET
FDS6676AS	FAIRCHILD	获取价格	30V N-Channel PowerTrench SyncFET
FDS6676AS	ONSEMI	获取价格	N 沟道，PowerTrench® SyncFET™，30V，14.5A，6.0mΩ
FDS6676AS	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
FDS6676AS_0511	FAIRCHILD	获取价格	30V N-Channel PowerTrench㈢ SyncFET
FDS6676AS_08	FAIRCHILD	获取价格	30V N-Channel PowerTrench㈢ SyncFET⑩
FDS6676AS_NL	FAIRCHILD	获取价格	30V N-Channel PowerTrench㈢ SyncFET