FDS6675_NL

更新时间： 2024-11-12 13:07:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
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FDS6675_NL 数据手册

January 2007

FDS6675

Single P-Channel, Logic Level, PowerTrench^TMMOSFET

General Description

Features

This P-Channel Logic Level MOSFET is produced

using Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize

the on-state resistance and yet maintain low gate charge

for superior switching performance.

-11 A, -30 V. R_DS(ON)= 0.014 W @ V_GS= -10 V,

R_DS(ON)= 0.020 W @ V_GS= -4.5 V.

Low gate charge (30nC typical).

High performance trench technology for extremely low

R_DS(ON)

These devices are well suited for notebook computer

applications: load switching and power management,

battery charging circuits, and DC/DC conversion.

High power and current handling capability.

SuperSOT^TM-6

SO-8

SOT-223

SuperSOT^TM-8

SOIC-16

SOT-23

SO-8

Absolute Maximum Ratings

T_A= 25^oC unless otherwise noted

Symbol

V_DSS

V_GSS

I_D

Parameter

FDS6675

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

-30

±20

(Note 1a)

-11

-50

P_D

Power Dissipation for Single Operation

(Note 1a)

2.5

(Note 1b)

(Note 1c)

1.2

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

R_q_JA

R_q_JC

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

°C/W

(Note 1)

FDS6675 Rev.C2

12 3 4 5

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