Datasheet > FDS4070N3_04

FDS4070N3_04

更新时间： 2024-11-14 04:18:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	174K
描述
40V N-Channel PowerTrench MOSFET

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FDS4070N3_04 数据手册

February 2004

FDS4070N3



40V N-Channel PowerTrench MOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

“low side” synchronous rectifier operation, providing an

extremely low R_DS(ON)in a small package.

• 15.3 A, 40 V. R_DS(ON)= 7.5 mΩ @ V_GS= 10 V

• High performance trench technology for extremely

low R_DS(ON)

• High power and current handling capability

• Fast switching, low gate charge

Applications

• Synchronous rectifier

• DC/DC converter

• FLMP SO-8 package: Enhanced thermal

performance in industry-standard package size

Bottom-side

Drain Contact

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

± 20

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

15.3

3.0

Maximum Power Dissipation

P_D

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1)

0.5

R_θJA

R_θJC

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

12mm

Quantity

2500 units

FDS4070N3

13’’

FDS4070N3 Rev B2 (W)

2004 Fairchild Semiconductor Corporation

12 3 4 5 6 7

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