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FDS3580_00

更新时间: 2024-11-18 03:36:31
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飞兆/仙童 - FAIRCHILD /
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5页 85K
描述
80V N-Channel PowerTrench MOSFET

FDS3580_00 数据手册

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December 2000  
FDS3580  
80V N-Channel PowerTrench MOSFET  
General Description  
Features  
7.6 A, 80 V. RDS(ON = 0.029 @ VGS = 10 V  
This N-Channel MOSFET has been designed specifically  
to improve the overall efficiency of DC/DC converters using  
either synchronous or conventional switching PWM  
controllers.  
)
RDS(ON) = 0.033 @ VGS = 6 V.  
Low gate charge (34nC typical).  
These MOSFETs feature faster switching and lower gate  
charge than other MOSFETs with comparable RDS(ON)  
specifications.  
Fast switching speed.  
High performance trench technology for extremely  
low RDS(ON)  
.
The result is a MOSFET that is easy and safer to drive  
(even at very high frequencies), and DC/DC power supply  
designs with higher overall efficiency.  
High power and current handling capability.  
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8  
S
TA = 25°C unless otherwise noted  
Absolute Maximum Ratings  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
VGSS  
ID  
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current - Continuous  
- Pulsed  
80  
V
V
A
20  
±
(Note 1a)  
(Note 1a)  
7.6  
50  
PD  
Power Dissipation for Single Operation  
2.5  
W
(Note 1b)  
(Note 1c)  
1.2  
1
C
TJ, Tstg  
Operating and Storage Junction Temperature Range  
-55 to +150  
°
Thermal Characteristics  
θ
θJC  
(Note 1a)  
(Note 1)  
R
R
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
50  
25  
C/W  
C/W  
JA  
°
°
Package Outlines and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape Width  
Quantity  
FDS3580  
FDS3580  
13’’  
12mm  
2500 units  
2000 Fairchild Semiconductor International  
FDS3580 Rev. C  

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