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FDS3590

更新时间： 2024-11-19 11:11:51
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
8页 201K
描述
N 沟道，PowerTrench® MOSFET，80V，6.5A，39mΩ

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中文翻译

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FDS3590 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.98
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：80 V
最大漏极电流 (Abs) (ID)：6.4 A最大漏极电流 (ID)：6.5 A
最大漏源导通电阻：0.037 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：2.5 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDS3590 数据手册

 浏览型号FDS3590的Datasheet PDF文件第2页浏览型号FDS3590的Datasheet PDF文件第3页浏览型号FDS3590的Datasheet PDF文件第4页浏览型号FDS3590的Datasheet PDF文件第5页浏览型号FDS3590的Datasheet PDF文件第6页浏览型号FDS3590的Datasheet PDF文件第7页 
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FDS3590 替代型号

型号 品牌 替代类型 描述 数据表
FDS3590 FAIRCHILD

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