Datasheet > FDMS10C4D2N

FDMS10C4D2N

更新时间： 2023-09-03 20:36:52

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	410K
描述
N 沟道屏蔽门极 PowerTrench® MOSFET 100V，124A，4.2mΩ

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDMS10C4D2N 数据手册

Electrical Characteristics T_J= 25 °C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Off Characteristics

BV_DSS

Drain to Source Breakdown Voltage

I_D= 250 μA, V_GS= 0 V

100

ΔBV_DSS

ΔT_J

Breakdown Voltage Temperature

Coefficient

_D= 250 μA, referenced to 25 °C

mV/°C

I_DSS

I_GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

V_DS= 80 V, V_GS= 0 V

V_GS= ±20 V, V_DS= 0 V

μA

100

On Characteristics

V_GS(th)

Gate to Source Threshold Voltage

V_GS= V_DS, I_D= 250 μA

2.0

3.1

-9

4.0

ΔV_GS(th)

ΔT_J

Gate to Source Threshold Voltage

Temperature Coefficient

_D= 250 μA, referenced to 25 °C

mV/°C

_GS= 10 V, I_D= 44 A

3.3

5.3

5.7

116

4.2

r_DS(on)

g_FS

Static Drain to Source On Resistance

Forward Transconductance

V_GS= 6 V, I_D= 22 A

mΩ

V_GS= 10 V, I_D= 44 A, T_J= 125 °C

V_DS= 10 V, I_D= 44 A

9.0

Dynamic Characteristics

C_iss

C_oss

C_rss

R_g

Input Capacitance

2945

1730

4500

2600

V_DS= 50 V, V_GS= 0 V,

f = 1 MHz

Output Capacitance

Reverse Transfer Capacitance

Gate Resistance

0.1

1.3

2.6

Switching Characteristics

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Rise Time

V_DD= 50 V, I_D= 44 A,

_GS= 10 V, R_GEN= 6 Ω

Turn-Off Delay Time

Fall Time

Q_g

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

V_GS= 0 V to 10 V

V_GS= 0 V to 6 V

9.3

Q_g

V_DD= 50 V,

_D= 44 A

Q_gs

Q_gd

Drain-Source Diode Characteristics

_GS= 0 V, I_S= 2.1 A

(Note 2)

0.7

0.8

1.2

1.3

V_SD

Source to Drain Diode Forward Voltage

V_GS= 0 V, I_S= 44 A

t_rr

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Time

Reverse Recovery Charge

I_F= 20 A, di/dt = 300 A/μs

I_F= 20 A, di/dt = 1000 A/μs

Q_rr

t_rr

Q_rr

158

253

Notes:

1. R

is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

is determined by the user's board design.

θJA

θCA

50 °C/W when mounted on a

1 in pad of 2 oz copper

b) 125 °C/W when mounted on a

minimum pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. E of 337 mJ is based on starting T = 25 °C; N-ch: L = 3 mH, I = 15 A, V = 100 V, V =10 V. 100% test at L = 0.1 mH, I = 49 A.

4. Pulsed Id please refer to Fig 11 SOA graph for more details.

5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.

FDMS10C4D2N Rev. 1.0

www.fairchildsemi.com

1 234 5 6 7 8

中文翻译

下载PDF

与FDMS10C4D2N相关器件

型号	品牌	获取价格	描述	数据表
FDMS1D2N03DSD	ONSEMI	获取价格	PowerTrench® Power Clip Asymmetric Dual N-Cha
FDMS1D4N03S	ONSEMI	获取价格	N 沟道，PowerTrench® SyncFETTM，30V，211A，1.09mΩ
FDMS1D5N03	ONSEMI	获取价格	N 沟道，PowerTrench® SyncFETTM，30V，218A，1.15mΩ
FDMS2380	FAIRCHILD	获取价格	Dual Integrated Solenoid Driver
FDMS2502SDC	FAIRCHILD	获取价格	Power Field-Effect Transistor, 43A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Me
FDMS2504SDC	FAIRCHILD	获取价格	N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM, 8LD, DUAL COOL PQFN, JEDEC MO-240
FDMS2506SDC	FAIRCHILD	获取价格	N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM, 8LD, DUAL COOL PQFN, JEDEC MO-240
FDMS2508SDC	FAIRCHILD	获取价格	N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM, 8LD, DUAL COOL PQFN, JEDEC MO-240
FDMS2572	FAIRCHILD	获取价格	N-Channel UltraFET Trench MOSFET
FDMS2572	ONSEMI	获取价格	N 沟道，UltraFET Trench® MOSFET，150V，27A，47mΩ

与FDMS10C4D2N相关文章

晶闸管阳极与阴极之间加电压时控制极的电流流动分析
2024-06-05

10
探究MOS管沟道夹断后载流子传输机制及其电路设计影响
2024-06-05

9
光敏电阻的工作原理、作用及检测方法
2024-06-05

8
ENC28J60以太网控制器全面解析：特性、应用、引脚说明
2024-06-05

6

产品中心

服务支持

精选活动

关于我们

帮助中心

FDMS10C4D2N

FDMS10C4D2N 数据手册

与FDMS10C4D2N相关器件

与FDMS10C4D2N相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FDMS10C4D2N

FDMS10C4D2N 数据手册

与FDMS10C4D2N相关器件

与FDMS10C4D2N相关文章

您还可以找

您在本页遇到什么问题？