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FDMS3006SDC PDF预览

FDMS3006SDC

更新时间: 2022-04-08 14:45:04
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
9页 490K
描述
N-Channel Dual CoolTM Power Trench® SyncFETTM 30 V, 49 A, 1.9 mΩ

FDMS3006SDC 数据手册

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August 2011  
FDMS3006SDC  
N-Channel Dual CoolTM Power Trench® SyncFETTM  
30 V, 49 A, 1.9 mΩ  
Features  
General Description  
„ Dual CoolTM Top Side Cooling PQFN package  
„ Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 30 A  
„ Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 26 A  
„ High performance technology for extremely low rDS(on)  
„ SyncFET Schottky Body Diode  
This N-Channel MOSFET is produced using Fairchild  
Semiconductor’s advanced Power process.  
Trench®  
Advancements in both silicon and Dual CoolTM package  
technologies have been combined to offer the lowest rDS(on)  
while maintaining excellent switching performance by extremely  
low Junction-to-Ambient thermal resistance. This device has the  
added benefit of an efficient monolithic Schottky body diode.  
„ RoHS Compliant  
Applications  
„ Synchronous Rectifier for DC/DC Converters  
„ Telecom Secondary Side Rectification  
„ High End Server/Workstation Vcore Low Side  
D
D
D
D
D
D
G
5
6
7
8
4
3
2
1
D
S
S
S
G
S
S
S
Pin 1  
D
Top  
Bottom  
Power 56  
MOSFET Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
30  
±20  
V
V
(Note 4)  
Drain Current -Continuous (Package limited)  
-Continuous (Silicon limited)  
-Continuous  
TC = 25 °C  
C = 25 °C  
49  
T
179  
ID  
A
TA = 25 °C  
(Note 1a)  
34  
-Pulsed  
200  
EAS  
Single Pulse Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation  
(Note 3)  
(Note 5)  
144  
mJ  
dv/dt  
1.8  
V/ns  
TC = 25 °C  
TA = 25 °C  
89  
PD  
W
Power Dissipation  
(Note 1a)  
3.3  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RθJC  
RθJC  
RθJA  
RθJA  
RθJA  
RθJA  
RθJA  
Thermal Resistance, Junction to Case  
(Top Source)  
(Bottom Drain)  
(Note 1a)  
2.7  
1.4  
38  
81  
16  
23  
11  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Ambient  
(Note 1b)  
°C/W  
(Note 1i)  
(Note 1j)  
(Note 1k)  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Dual CoolTM Power 56  
Reel Size  
Tape Width  
12 mm  
Quantity  
3006S  
FDMS3006SDC  
13’’  
3000 units  
©2011 Fairchild Semiconductor Corporation  
FDMS3006SDC Rev.C  
1
www.fairchildsemi.com  

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