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FDMS10C4D2N PDF预览

FDMS10C4D2N

更新时间: 2023-09-03 20:36:52
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 410K
描述
N 沟道屏蔽门极 PowerTrench® MOSFET 100V,124A,4.2mΩ

FDMS10C4D2N 数据手册

 浏览型号FDMS10C4D2N的Datasheet PDF文件第1页浏览型号FDMS10C4D2N的Datasheet PDF文件第2页浏览型号FDMS10C4D2N的Datasheet PDF文件第3页浏览型号FDMS10C4D2N的Datasheet PDF文件第5页浏览型号FDMS10C4D2N的Datasheet PDF文件第6页浏览型号FDMS10C4D2N的Datasheet PDF文件第7页 
Typical Characteristics TJ = 25 °C unless otherwise noted  
300  
6
4
2
0
VGS = 10 V  
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
VGS = 5 V  
250  
200  
150  
100  
50  
VGS = 8 V  
VGS = 6.5 V  
VGS = 6 V  
VGS = 6.5 V  
VGS = 6 V  
VGS = 8 V  
VGS = 5 V  
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
VGS = 10 V  
100  
0
0
1
2
3
4
0
50  
150  
200  
250  
300  
VDS, DRAIN TO SOURCE VOLTAGE (V)  
ID, DRAIN CURRENT (A)  
Figure 1. On-Region Characteristics  
Figure2. N o r m a l i z e d O n - R e s i s ta n c e  
vs Drain Current and Gate Voltage  
2.0  
30  
PULSE DURATION = 80 μs  
ID = 44 A  
DUTY CYCLE = 0.5% MAX  
VGS = 10 V  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
25  
20  
15  
10  
5
ID = 44 A  
TJ = 125 o  
C
TJ = 25 o  
C
0
-75 -50 -25  
0
25 50 75 100 125 150  
4
5
6
7
8
9
10  
TJ, JUNCTION TEMPERATURE (oC)  
VGS, GATE TO SOURCE VOLTAGE (V)  
F i gu re 3 . N orma li zed On - Res is ta nc e  
vs Junction Temperature  
Figure4. On-Resistance vs Gate to  
Source Voltage  
300  
300  
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
VGS = 0 V  
100  
250  
200  
150  
100  
50  
VDS = 5 V  
10  
1
TJ = 150 o  
C
TJ = 25 o  
C
0.1  
TJ = 150 o  
C
TJ = 25 o  
C
0.01  
0.001  
TJ = -55 o  
C
TJ = -55 o  
C
0
2
4
6
8
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
VGS, GATE TO SOURCE VOLTAGE (V)  
VSD, BODY DIODE FORWARD VOLTAGE (V)  
Figure 5. Transfer Characteristics  
Figure6. Source to Drain Diode  
Forward Voltage vs Source Current  
©2016 Fairchild Semiconductor Corporation  
FDMS10C4D2N Rev. 1.0  
3
www.fairchildsemi.com  

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