Datasheet > FDMS10C4D2N

FDMS10C4D2N

更新时间： 2023-09-03 20:36:52

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	410K
描述
N 沟道屏蔽门极 PowerTrench® MOSFET 100V，124A，4.2mΩ

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FDMS10C4D2N 数据手册

PQFN8 5X6, 1.27P

CASE 483AE

ISSUE A

5.10

3.91

5.10

PKG

SEE

DETAIL B

1.27

6.61

0.77

4.52

3.75

5.85

5.65

PKG

6.15

KEEP OUT

AREA

1.27

TOP VIEW

0.61

1.27

3.81

LAND PATTERN

RECOMMENDATION

OPTIONAL DRAFT

ANGLE MAY APPEAR

ON FOUR SIDES

SEE

DETAIL C

5.00

4.80

OF THE PACKAGE

0.35

0.15

ꢀꢁꢂꢃ

0.10 C

0.30

0.05

0.00

SIDE VIEW

ꢀꢁꢂꢃ

0.08 C

0.35

0.15

5.20

4.80

1.10

0.90

SEATING

PLANE

DETAIL C

DETAIL B

SCALE: 2:1

3.81

SCALE: 2:1

1.27

0.51

(8X)

0.31

NOTES: UNLESS OTHERWISE SPECIFIED

(0.34)

A. PACKAGE STANDARD REFERENCE: JEDEC MO-240,

ISSUE A, VAR. AA,.

0.10

C A B

B. DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH.

MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM.

C. ALL DIMENSIONS ARE IN MILLIMETERS.

0.76

0.51

(0.52)

D. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009.

E. IT IS RECOMMENDED TO HAVE NO TRACES OR

VIAS WITHIN THE KEEP OUT AREA.

6.25

5.90

+0.30

3.48

-0.10

(0.50)

(0.30)

(2X)

ꢀꢄꢅꢅꢀꢄꢂꢀ

+0.10

-0.15

0.20

(8X)

3.96

3.61

BOTTOM VIEW

1...4 5 678

下载PDF

与FDMS10C4D2N相关器件

型号	品牌	描述	获取价格	数据表
FDMS1D2N03DSD	ONSEMI	PowerTrench® Power Clip Asymmetric Dual N-Cha	获取价格
FDMS1D4N03S	ONSEMI	N 沟道，PowerTrench® SyncFETTM，30V，211A，1.09mΩ	获取价格
FDMS1D5N03	ONSEMI	N 沟道，PowerTrench® SyncFETTM，30V，218A，1.15mΩ	获取价格
FDMS2380	FAIRCHILD	Dual Integrated Solenoid Driver	获取价格
FDMS2502SDC	FAIRCHILD	Power Field-Effect Transistor, 43A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Me	获取价格
FDMS2504SDC	FAIRCHILD	N-Channel Dual CoolTM 56 PowerTrench® SyncFETTM, 8LD, DUAL COOL PQFN, JEDEC MO-240	获取价格