Datasheet > FDMS10C4D2N

FDMS10C4D2N

更新时间： 2023-09-03 20:36:52

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	410K
描述
N 沟道屏蔽门极 PowerTrench® MOSFET 100V，124A，4.2mΩ

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FDMS10C4D2N 数据手册

September 2016

FDMS10C4D2N

N-Channel Shielded Gate PowerTrench^®MOSFET

100 V, 124 A, 4.2 mΩ

Features

General Description

Shielded Gate MOSFET Technology

This N-Channel MV MOSFET is produced using Fairchild

Semiconductor’s advanced PowerTrench^®process that

incorporates Shielded Gate technology. This process has been

optimized to minimise on-state resistance and yet maintain

superior switching performance with best in class soft body

diode.

Max r_DS(on)= 4.2 mΩ at V_GS= 10 V, I_D= 44 A

Max r_DS(on)= 14 mΩ at V_GS= 6 V, I_D= 22 A

ADD

50% lower Qrr than other MOSFET suppliers

Lowers switching noise/EMI

MSL1 robust package design

100% UIL tested

Applications

Industrial Motor Drive

Industrial Power Supply

Industrial Automation

Battery Operated Tools

Battery Protection

Solar Inverters

RoHS Compliant

UPS and Energy Inverters

Energy Storage

Load Switch

Bottom

Top

Pin 1

Power 56

MOSFET Maximum Ratings T_A= 25 °C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

100

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current -Continuous

-Continuous

±20

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

(Note 5)

(Note 1a)

(Note 4)

(Note 3)

124

I_D

-Continuous

-Pulsed

510

E_AS

Single Pulse Avalanche Energy

Power Dissipation

337

T_C= 25 °C

T_A= 25 °C

125

P_D

(Note 1a)

2.5

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.0

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13 ’’

Tape Width

12 mm

Quantity

FDMS10C4D2N

Power 56

3000 units

FDMS10C4D2N Rev. 1.0

www.fairchildsemi.com

123 4 5 6 7 8

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