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FDD8782 PDF预览

FDD8782

更新时间： 2024-02-20 06:22:11
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 547K
描述
N 沟道，PowerTrench® MOSFET，25V，35A，11mΩ

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中文翻译

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FDD8782 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：TO-252AA
包装说明：ROHS COMPLIANT, DPAK-3针数：3
Reach Compliance Code：unknown风险等级：5.36
Is Samacsys：N其他特性：AVALANCHE RATED
雪崩能效等级（Eas）：70 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：25 V
最大漏极电流 (ID)：35 A最大漏源导通电阻：0.014 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-252AA
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：321 A
认证状态：COMMERCIAL表面贴装：YES
端子面层：MATTE TIN端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：30
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDD8782 数据手册

 浏览型号FDD8782的Datasheet PDF文件第2页浏览型号FDD8782的Datasheet PDF文件第3页浏览型号FDD8782的Datasheet PDF文件第4页浏览型号FDD8782的Datasheet PDF文件第5页浏览型号FDD8782的Datasheet PDF文件第6页浏览型号FDD8782的Datasheet PDF文件第7页 
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FDD8796 UMW

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FDD8870 FAIRCHILD

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 		N-Channel PowerTrench MOSFET
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 		N 沟道，PowerTrench® MOSFET，30V，160A，3.9mΩ
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 		种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
FDD8870_08 FAIRCHILD

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 		N-Channel PowerTrench㈢ MOSFET
FDD8870_F085_13 FAIRCHILD

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FDD8870_NL FAIRCHILD

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 		Power Field-Effect Transistor, 21A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Me
FDD8870-F085 ONSEMI

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 		30 V、160 A、3.2 mΩ、Dual DPAKN 沟道 PowerTrench®

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