Datasheet > FDD3860_08

FDD3860_08

更新时间： 2024-11-27 10:32:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	342K
描述
N-Channel PowerTrench MOSFET

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FDD3860_08 数据手册

October 2008

FDD3860

N-Channel PowerTrench^®MOSFET

100V, 29A, 36mΩ

Features

General Description

Max r_DS(on)= 36mΩ at V_GS= 10V, I_D= 5.9A

High performance trench technology for extremely low r_DS(on)

100% UIL tested

This N-Channel MOSFET is rugged gate version of Fairchild

Semiconductor‘s advanced Power Trench^®process. This part is

tailored for low r_DS(on)and low Qg figure of merit, with avalanche

ruggedness for a wide range of switching applications.

RoHS Compliant

Applications

DC-AC Conversion

Synchronous Rectifier

D-PAK

TO-252

(TO-252)

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

100

±20

Drain Current -Continuous (Silicon limited)

-Continuous

T_C= 25°C

T_A= 25°C

I_D

(Note 1a)

(Note 3)

6.2

-Pulsed

E_AS

Single Pulse Avalanche Energy

Power Dissipation

121

T_C= 25°C

T_A= 25°C

P_D

Power Dissipation

(Note 1a)

3.1

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.8

°C/W

(Note 1a)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

13’’

Tape Width

12mm

Quantity

FDD3860

D-PAK (TO-252)

2500 units

FDD3860 Rev.C1

www.fairchildsemi.com

12 3 4 5 6

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