Datasheet > FDC3512D84Z

FDC3512D84Z

更新时间： 2024-02-13 20:10:20

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	133K
描述
Small Signal Field-Effect Transistor, 3A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

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FDC3512D84Z 数据手册

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Drain-Source Avalanche Ratings (Note 2)

W_DSS

I_AR

Drain-Source Avalanche Energy

Drain-Source Avalanche Current

Single Pulse, V_DD= 40 V, I_D=3.0 A

3.0

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage

V_GS= 0 V, I_D= 250 µA

∆BVDSS

Breakdown Voltage Temperature

I_D= 250 µA, Referenced to 25°C

mV/°C

Coefficient

∆T_J

I_DSS

I_GSSF

I_GSSR

Zero Gate Voltage Drain Current

Gate–Body Leakage, Forward

Gate–Body Leakage, Reverse

V_DS= 64 V, V_GS= 0 V

V_GS= 20 V, V_DS= 0 V

V_GS= –20 V, V_DS= 0 V

100

–100

µA

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

2.4

–6

V_DS= V_GS, I_D= 250 µA

I_D= 250 µA, Referenced to 25°C

∆VGS(th)

Gate Threshold Voltage

mV/°C

Temperature Coefficient

∆T_J

_GS= 10 V, I_D= 3.0 A

_GS= 6.0 V, I_D= 2.8 A

Static Drain–Source

On Resistance

mΩ

R_DS(on)

141

V_GS= 10 V, I_D= 3.0 A;T_J= 125°C

I_D(on)

g_FS

On–State Drain Current

Forward Transconductance

V_GS= 10 V, V_DS= 5 V

V_DS= 10 V, I_D= 3.0 A

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

634

V_DS= 40 V,

f = 1.0 MHz

V _GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

2.4

2.8

V_DD= 40 V,

V_GS= 10 V,

I_D= 1 A,

R_GEN= 6 Ω

Q_g

Q_gs

Q_gd

_DS= 40 V,

_GS= 10 V

I_D= 3.0 A,

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain–Source Diode Forward Current

Drain–Source Diode Forward

1.3

1.2

V_SD

_GS= 0 V, I_S= 1.3 A

(Note 2)

0.8

Voltage

t_rr

Q_rr

Diode Reverse Recovery Time

Diode Reverse Recovery Charge

I_F= 3.0 A,

28.2

d_iF/d_t= 300 A/µs

Notes:

1. R_θJAis the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain

pins. R_θJCis guaranteed by design while R_θCAis determined by the user's board design.

a. 78°C/W when mounted on a 1in²pad of 2oz copper on FR-4 board.

b. 156°C/W when mounted on a minimum pad.

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

FDC3512 Rev B2(W)

123 4 5

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