Datasheet > FCI25N60NF102

FCI25N60NF102

更新时间： 2024-09-18 12:04:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	364K
描述
N-Channel SupreMOSÂ® MOSFET 600 V, 25 A, 125 mÎ©

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FCI25N60NF102 数据手册

March 2013

FCI25N60N_F102

N-Channel SupreMOS MOSFET

600 V, 25 A, 125 mΩ

Features

Description

•

R_DS(on)= 107 mΩ (Typ.)@ V_GS= 10 V, I_D= 12.5 A

Ultra Low Gate Charge (Typ. Qg = 57 nC)

Low Effective Output Capacitance (Typ. C_oss.eff = 262 pF)

100% Avalanche Tested

The SupreMOS MOSFET is Fairchild Semiconductor ’s next-

generation of high voltage super-junction (SJ) technology

employing a deep trench filling process that differentiate it from

the conventional MOSFETs. This advanced technology and pre-

cise process control provide lowest Rsp on-resistance, superior

switching performance and ruggedness. SupreMOS MOSFET is

suitable for high frequency switching power converter applica-

tions such as PFC, server/telecom power, FPD TV power, ATX

power and industrial power applications.

RoHS Compliant

Applications

•

Solar Inverter

•

AC-DC Power Supply

MOSFET Maximum Ratings T_C= 25^oC unless otherwise noted*

Symbol

V_DSS

V_GSS

Parameter

FCI25N60N_F102

Unit

Drain to Source Voltage

Gate to Source Voltage

600

±30

Continuous (T_C= 25^oC)

Continuous (T_C= 100^oC)

Pulsed

I_D

Drain Current

I_DM

E_AS

I_AR

Drain Current

(Note 1)

(Note 2)

Single Pulsed Avalanche Energy

Avalanche Current

861

8.3

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

MOSFET dv/dt

2.2

(Note 3)

dv/dt

P_D

V/ns

100

(T_C= 25^oC)

Derate above 25^oC

216

W/^oC

^oC

Power Dissipation

1.72

-55 to +150

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

^oC

*Drain current limited by maximum junction temperature

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction to Case

FCI25N60N_F102

Unit

R_θJC

R_θCS

R_θJA

0.58

0.5

Thermal Resistance, Case to Heat Sink (Typical)

Thermal Resistance, Junction to Ambient

^oC/W

62.5

FCI25N60N_F102 Rev. C0

www.fairchildsemi.com

12 3 4 5 6 7 8

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