FCI7N60

更新时间： 2024-09-17 22:23:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	952K
描述
600V N-Channel MOSFET

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FCI7N60 数据手册

July 2005

SuperFET^TM

FCI7N60

600V N-Channel MOSFET

Features

Description

•

650V @T = 150°C

SuperFET^TMis, Farichild’s proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance.

Typ. R

= 0.53Ω

DS(on)

Ultra Low Gate Charge (typ. Q = 25nC)

Low Effective Output Capacitance (typ. C eff. = 60pF)

This advanced technology has been tailored to minimize con-

duction loss, provide superior switching performance, and with-

stand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system min-

iaturization and higher efficiency.

oss

100% Avalanche Tested

{

ꢀ ꢁ

G _{

{

G D S

Absolute Maximum Ratings

Symbol

DSS

Parameter

FCI7N60

Unit

Drain-Source Voltage

Drain Current

600

- Continuous (T = 25°C)

- Continuous (T = 100°C)

4.4

(Note 1)

Drain Current

- Pulsed

Gate-Source voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

230

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

8.3

4.5

V/ns

dv/dt

Power Dissipation

(T = 25°C)

0.67

W/°C

- Derate above 25°C

Operating and Storage Temperature Range

-55 to +150

°C

J, STG

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

Thermal Characteristics

Symbol

θJC

Parameter

FCI7N60

1.5

Unit

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

62.5

θJA

FCI7N60 Rev. A1

www.fairchildsemi.com

12 3 4 5 6 7 8

中文翻译

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FCI7N60 替代型号

型号	品牌	替代类型	描述	数据表
FCU7N60TU	FAIRCHILD	类似代替	暂无描述
FCU7N60	FAIRCHILD	功能相似	600V N-Channel MOSFET

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