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FCI25N60N-F102 PDF预览

FCI25N60N-F102

更新时间: 2024-09-19 11:12:43
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
10页 900K
描述
功率 MOSFET,N 沟道,SUPREMOS®,FAST,600 V,25 A,125 mΩ,I2PAK

FCI25N60N-F102 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:2.1配置:Single
最大漏极电流 (Abs) (ID):25 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):216 W
子类别:FET General Purpose Power表面贴装:NO
Base Number Matches:1

FCI25N60N-F102 数据手册

 浏览型号FCI25N60N-F102的Datasheet PDF文件第2页浏览型号FCI25N60N-F102的Datasheet PDF文件第3页浏览型号FCI25N60N-F102的Datasheet PDF文件第4页浏览型号FCI25N60N-F102的Datasheet PDF文件第5页浏览型号FCI25N60N-F102的Datasheet PDF文件第6页浏览型号FCI25N60N-F102的Datasheet PDF文件第7页 
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