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FCB20N60 PDF预览

FCB20N60

更新时间: 2024-11-17 22:07:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 615K
描述
600V N-Channel MOSFET

FCB20N60 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-263
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.17
Is Samacsys:N雪崩能效等级(Eas):690 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):20 A
最大漏源导通电阻:0.19 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):60 A
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FCB20N60 数据手册

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TM  
SuperFET  
FCB20N60  
600V N-Channel MOSFET  
Features  
Description  
TM  
650V @T = 150°C  
SuperFET  
is, Farichild’s proprietary, new generation of high  
J
voltage MOSFET family that is utilizing an advanced charge  
balance mechanism for outstanding low on-resistance and  
lower gate charge performance.  
Typ. R  
= 0.15  
DS(on)  
Ultra low gate charge (typ. Q = 75nC)  
g
Low effective output capacitance (typ. C .eff = 165pF)  
This advanced technology has been tailored to minimize con-  
duction loss, provide superior switching performance, and with-  
stand extreme dv/dt rate and higher avalanche energy.  
Consequently, SuperFET is very suitable for various AC/DC  
power conversion in switching mode operation for system min-  
iaturization and higher efficiency.  
oss  
100% avalanche tested  
D
!
D
"
! "  
"
G!  
"
G
!
S
S
Absolute Maximum Ratings  
Symbol  
Parameter  
FCB20N60  
Unit  
V
Drain-Source Voltage  
Drain Current  
600  
V
DSS  
I
- Continuous (T = 25°C)  
20  
12.5  
A
A
D
C
- Continuous (T = 100°C)  
C
(Note 1)  
I
Drain Current  
- Pulsed  
A
DM  
60  
± 30  
690  
20  
V
E
Gate-Source voltage  
V
mJ  
A
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
I
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
20.8  
4.5  
mJ  
V/ns  
AR  
dv/dt  
P
Power Dissipation  
(T = 25°C)  
208  
W
D
C
- Derate above 25°C  
1.67  
W/°C  
T
T
T
Operating and Storage Temperature Range  
-55 to +150  
300  
°C  
°C  
J, STG  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
L
Thermal Characteristics  
Symbol  
Parameter  
FCB20N60  
Unit  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient*  
Thermal Resistance, Junction-to-Ambient  
0.6  
40  
θJC  
*
θJA  
62.5  
θJA  
* When mounted on the minimum pad size recommended (PCB Mount  
©2005 Fairchild Semiconductor Corporation  
FCB20N60 Rev. A  
1
www.fairchildsemi.com  

FCB20N60 替代型号

型号 品牌 替代类型 描述 数据表
FCB20N60TM FAIRCHILD

完全替代

Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Met
STB23NM60ND STMICROELECTRONICS

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