是否无铅: | 不含铅 | 生命周期: | End Of Life |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | not_compliant |
风险等级: | 6.19 | 雪崩能效等级(Eas): | 217.8 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (Abs) (ID): | 20 A |
最大漏极电流 (ID): | 20 A | 最大漏源导通电阻: | 0.195 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 405 W | 参考标准: | AEC-Q101 |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FCB20N60FTM | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,SUPERFET®,FRFET®,600 V,20 A,19 | |
FCB20N60FTM | FAIRCHILD |
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600V N-CHANNEL FRFET | |
FCB20N60TM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Met | |
FCB20N60TM | ROCHESTER |
获取价格 |
20A, 600V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, LEAD FREE, D2PAK-3 | |
FCB20N60TM | ONSEMI |
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功率 MOSFET,N 沟道,SUPERFET®,Easy Drive,600 V,20 | |
FCB-25P | BEL |
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D Subminiature Connector, 25 Contact(s), Male, IDC Terminal, Plug, | |
FCB-25PT1 | BEL |
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D Subminiature Connector, 25 Contact(s), Male, IDC Terminal, Plug, | |
FCB-25PTI1 | BEL |
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D Subminiature Connector, 25 Contact(s), Male, IDC Terminal, Plug, | |
FCB-25ST1 | BEL |
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D Subminiature Connector, 25 Contact(s), Female, IDC Terminal, Socket, | |
FCB260N65S3 | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,SUPERFET® III,Easy Drive,650 V |