Datasheet > FCB20N60FTM

FCB20N60FTM

更新时间： 2024-01-27 05:49:46

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲晶体管
页数	文件大小	规格书
10页	556K
描述
功率 MOSFET，N 沟道，SUPERFET®，FRFET®，600 V，20 A，190 mΩ，D2PAK

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FCB20N60FTM 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	D2PAK
包装说明：	SMALL OUTLINE, R-PSSO-G2	针数：	2
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.95	风险等级：	3.73
Samacsys Description：	FCB20N60FTM N-Channel MOSFET, 20 A, 600 V SuperFET, 3-Pin D2PAK ON Semiconductor	雪崩能效等级（Eas）：	690 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	600 V	最大漏极电流 (Abs) (ID)：	20 A
最大漏极电流 (ID)：	20 A	最大漏源导通电阻：	0.19 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PSSO-G2
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	2
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	245
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	208 W
最大脉冲漏极电流 (IDM)：	60 A	认证状态：	Not Qualified
子类别：	FET General Purpose Powers	表面贴装：	YES
端子面层：	Matte Tin (Sn)	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON

FCB20N60FTM 数据手册

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与FCB20N60FTM相关器件

型号	品牌	描述	获取价格	数据表
FCB20N60TM	FAIRCHILD	Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Met	获取价格
FCB20N60TM	ROCHESTER	20A, 600V, 0.19ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263, LEAD FREE, D2PAK-3	获取价格
FCB20N60TM	ONSEMI	功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，20	获取价格
FCB-25P	BEL	D Subminiature Connector, 25 Contact(s), Male, IDC Terminal, Plug,	获取价格
FCB-25PT1	BEL	D Subminiature Connector, 25 Contact(s), Male, IDC Terminal, Plug,	获取价格
FCB-25PTI1	BEL	D Subminiature Connector, 25 Contact(s), Male, IDC Terminal, Plug,	获取价格

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