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FCB20N60FTM PDF预览

FCB20N60FTM

更新时间： 2024-11-22 11:13:31
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
10页 556K
描述
功率 MOSFET，N 沟道，SUPERFET®，FRFET®，600 V，20 A，190 mΩ，D2PAK

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中文翻译

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FCB20N60FTM 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PSSO-G2Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：4 weeks风险等级：1.26
雪崩能效等级（Eas）：690 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：600 V
最大漏极电流 (Abs) (ID)：20 A最大漏极电流 (ID)：20 A
最大漏源导通电阻：0.19 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：208 W最大脉冲漏极电流 (IDM)：60 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FCB20N60FTM 数据手册

 浏览型号FCB20N60FTM的Datasheet PDF文件第2页浏览型号FCB20N60FTM的Datasheet PDF文件第3页浏览型号FCB20N60FTM的Datasheet PDF文件第4页浏览型号FCB20N60FTM的Datasheet PDF文件第5页浏览型号FCB20N60FTM的Datasheet PDF文件第6页浏览型号FCB20N60FTM的Datasheet PDF文件第7页 
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中文翻译

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FCB20N60FTM 替代型号

型号 品牌 替代类型 描述 数据表
FCB20N60TM ONSEMI

完全替代

 功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，20
FCB20N60FTM FAIRCHILD

功能相似

 600V N-CHANNEL FRFET
STB25NM60N STMICROELECTRONICS

功能相似

 N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET

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