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FCB36N60NTM PDF预览

FCB36N60NTM

更新时间: 2024-11-18 12:56:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 239K
描述
N-Channel SupreMOS® MOSFET 600 V, 36 A, 90 mΩ

FCB36N60NTM 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:D2PAK
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.69配置:Single
最大漏极电流 (Abs) (ID):36 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e3湿度敏感等级:1
最高工作温度:150 °C峰值回流温度(摄氏度):245
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):312 W
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

FCB36N60NTM 数据手册

 浏览型号FCB36N60NTM的Datasheet PDF文件第2页浏览型号FCB36N60NTM的Datasheet PDF文件第3页浏览型号FCB36N60NTM的Datasheet PDF文件第4页浏览型号FCB36N60NTM的Datasheet PDF文件第5页浏览型号FCB36N60NTM的Datasheet PDF文件第6页浏览型号FCB36N60NTM的Datasheet PDF文件第7页 
March 2013  
FCB36N60N  
N-Channel SupreMOS MOSFET  
®
600 V, 36 A, 90 mΩ  
Features  
Description  
®
®
RDS(on) = 81 mΩ (Typ.)@ VGS = 10 V, ID = 18 A  
Ultra low gate charge (Typ. Qg = 86 nC)  
Low effective output capacitance (Typ. Coss.eff = 361 pF)  
100% avalanche tested  
The SupreMOS MOSFET is Fairchild Semiconductor ’s next-  
generation of high voltage super-junction (SJ) technology  
employing a deep trench filling process that differentiate it from  
the conventional MOSFETs. This advanced technology and pre-  
cise process control provide lowest Rsp on-resistance, superior  
switching performance and ruggedness. SupreMOS MOSFET is  
suitable for high frequency switching power converter applica-  
tions such as PFC, server/telecom power, FPD TV power, ATX  
power and industrial power applications.  
RoHS compliant  
Applications  
Solar Inverter  
AC-DC Power Supply  
D
D
G
G
S
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*  
Symbol  
VDSS  
VGSS  
Parameter  
FCB36N60N  
600  
Unit  
V
Drain to Source Voltage  
Gate to Source Voltage  
±30  
V
-Continuous (TC = 25oC)  
-Continuous (TC = 100oC)  
- Pulsed  
36  
ID  
Drain Current  
A
22.7  
IDM  
EAS  
IAR  
Drain Current  
(Note 1)  
(Note 2)  
108  
A
mJ  
Single Pulsed Avalanche Energy  
Avalanche Current  
1800  
12  
A
EAR  
Repetitive Avalanche Energy  
MOSFET dv/dt Ruggedness  
Peak Diode Recovery dv/dt  
3.12  
mJ  
100  
V/ns  
V/ns  
W
W/oC  
oC  
dv/dt  
PD  
(Note 3)  
20  
(TC = 25oC)  
- Derate above 25oC  
312  
Power Dissipation  
2.6  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
-55 to +150  
Maximum Lead Temperature for Soldering Purpose,  
1/8” from Case for 5 Seconds  
300  
oC  
*Drain current limited by maximum junction temperature  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction to Case  
FCB36N60N  
Unit  
RθJC  
0.4  
40  
RθJA  
RθJA  
*
Thermal Resistance, Junction to Ambient *  
Thermal Resistance, Junction to Ambient  
oC/W  
62.5  
*When mounted on the minmium pad size recommended (PCB Mount)  
©2010 Fairchild Semiconductor Corporation  
FCB36N60N Rev. C0  
1
www.fairchildsemi.com  

FCB36N60NTM 替代型号

型号 品牌 替代类型 描述 数据表
FCP36N60N FAIRCHILD

完全替代

N-Channel MOSFET
STB42N65M5 STMICROELECTRONICS

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