FCB20N60F

更新时间： 2024-11-18 03:36:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	861K
描述
600V N-CHANNEL FRFET

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FCB20N60F 数据手册

December 2006

SuperFET

FCB20N60F

600V N-CHANNEL FRFET

Features

Description

650V @ T_J= 150°C

SuperFET^TMis, Farichild’s proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance. ꢀ

Typ. Rds(on)=0.15:

Fast Recovery Type ( t_rr= 160ns )

Ultra low gate charge (typ. Qg=75nC)

Low effective output capacitance (typ. Coss.eff=165pF)

100% avalanche tested

This advanced technology has been tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system

miniaturization and higher efficiency.

Absolute Maximum Ratings

Symbol

Parameter

FCB20N60F

Unit

V_DSS

Drain-Source Voltage

Drain Current

600

I_D

- Continuous (T_C= 25qC)

- Continuous (T_C= 100qC)

12.5

(Note 1)

(Note 2)

I_DM

Drain Current

- Pulsed

r 30

690

V_GSS

E_AS

I_AR

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

(Note 1)

(Note 3)

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

20.8

V/ns

Power Dissipation

(T_C= 25qC)

- Derate above 25qC

208

1.67

W/qC

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

Thermal Characteristics

Symbol

R_TJC

Parameter

FCB20N60F

Unit

qC/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient*

Thermal Resistance, Junction-to-Ambient

0.6

R_TJA

62.5

* When mounted on the minimum pad size recommended (PCB Mount)

FCB20N60F Rev. A2

www.fairchildsemi.com

12 3 4 5 6 7 8

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