Datasheet > F59D1G81LB-45TG2M

F59D1G81LB-45TG2M

更新时间： 2022-05-14 22:21:07

品牌	Logo	应用领域
晶豪 - ESMT		/
页数	文件大小	规格书
53页	1978K
描述
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

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F59D1G81LB-45TG2M 数据手册

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ESMT

F59D1G81LB / F59D1G161LB (2M)

BLOCK DIAGRAM (x8)

ARRAY ORGANIZATION (x8)

Address Cycle Map (x8)

I/O0

I/O1

I/O2

I/O3

I/O4

I/O5

I/O6

I/O7

Address

1st cycle

2nd cycle

3rd cycle

4th cycle

Column Address

Row Address

A10

A14

A22

A11

A15

A23

A12

A20

A13

A21

A16

A24

A17

A25

A18

A26

A19

A27

NOTE:

Column Address: Starting Address of the Register.

* L must be set to “Low”.

* The device ignores any additional input of address cycles than required.

* A12~A17 are for Page Address, A18~A27 are for Block Address.

Elite Semiconductor Memory Technology Inc.

Publication Date: Aug. 2018

Revision: 1.0 7/53

1...4 5 678 9 10...53

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