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F59D2G81KA-45BCG2N

更新时间： 2024-11-15 02:51:27
品牌 Logo 应用领域
晶豪 - ESMT /
页数 文件大小 规格书
60页 985K
描述
2 Gbit (256M x 8) 1.8V NAND Flash Memory

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F59D2G81KA-45BCG2N 数据手册

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ESMT  
(Preliminary)  
F59D2G81KA (2N)  
Flash  
2 Gbit (256M x 8)  
1.8V NAND Flash Memory  
FEATURES  
Voltage Supply  
1bit/cell  
­
VCC: 1.8V (1.7 V ~ 1.95V)  
Command/Address/Data Multiplexed DQ Port  
Hardware Data Protection  
Organization  
­
­
­
­
Page Size: (2K + 128) bytes  
Data Register: (2K + 128) bytes  
Block Size: 64Pages = (128K + 8K) bytes  
Number of Block per Die (LUN)= 2048  
­
Program/Erase Lockout During Power Transitions  
Reliable CMOS Floating Gate Technology  
­
­
­
ECC Requirement: 8bit / 512Byte  
Endurance: 50K-P/E Cycle Times  
Uncycled Data Retention: 10 years of real time use at 55°C  
Automatic Program and Erase  
Command Register Operation  
Number of partial program cycles in the same page (NOP) : 4  
Automatic Page 0 Read at Power-Up Option  
­
­
Page Program: (2K + 128) bytes  
Block Erase: (128K + 8K) bytes  
Page Read Operation  
­
­
Write Cycle Time  
­
­
Boot from NAND support  
Random Read: 25us (Max.)  
Read Cycle: 45ns  
­
Automatic Memory Download  
Cache Program Operation for High Performance Program  
Cache Read Operation  
Copy-Back Operation  
Two-Plane Operation  
EDO mode  
Page Program Time: 400us (Typ.)  
700us (Max.)  
Block Erase Time: 3.5ms (Typ.)  
10ms (Max.)  
­
Page copy  
ORDERING INFORMATION  
Product ID  
Speed  
45 ns  
45 ns  
45 ns  
Package  
48 pin TSOPI  
63 ball BGA  
67 ball BGA  
Comments  
Pb-free  
F59D2G81KA -45TG2N  
F59D2G81KA -45BG2N  
F59D2G81KA -45BCG2N  
Pb-free  
Pb-free  
GENERAL DESCRIPTION  
The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the  
memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128Kbytes + 8Kbytes).  
The device is a memory device which utilizes the I/O pins for both address and data input/output as well as command inputs. The  
Erase and Program operations are automatically executed making the device most suitable for applications such as solid state file  
storage, voice recording, image file memory for still cameras and other systems which require high density non-volatile memory data  
storage.  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Feb. 2020  
Revision: 0.1 1/60  
1234567...60

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