Datasheet > F59L2G81KA-25TG2N

F59L2G81KA-25TG2N

更新时间： 2022-06-24 15:41:35

品牌	Logo	应用领域
晶豪 - ESMT		/
页数	文件大小	规格书
60页	1361K
描述
2 Gbit (256M x 8) 3.3V NAND Flash Memory

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ESMT

(Preliminary)

F59L2G81KA (2N)

Flash

2 Gbit (256M x 8)

3.3V NAND Flash Memory

FEATURES



Voltage Supply



1bit/cell

V_CC: 3.3V (2.7 V ~ 3.6V)

Command/Address/Data Multiplexed DQ Port

Hardware Data Protection

Organization

Page Size: (2K + 128) bytes

Data Register: (2K + 128) bytes

Block Size: 64Pages = (128K + 8K) bytes

Number of Block per Die (LUN)= 2048

Program/Erase Lockout During Power Transitions



Reliable CMOS Floating Gate Technology

ECC Requirement: 8bit / 512Byte

Endurance: 50K-P/E Cycle Times

Data Retention: 10year



Automatic Program and Erase



Command Register Operation

Number of partial program cycles in the same page (NOP) : 4

Automatic Page 0 Read at Power-Up Option

Page Program: (2K + 128) bytes

Block Erase: (128K + 8K) bytes

Page Read Operation

Write Cycle Time

Boot from NAND support

Random Read: 25us (Max.)

Read Cycle: 25ns

Automatic Memory Download



Cache Program Operation for High Performance Program

Cache Read Operation

Copy-Back Operation

Two-Plane Operation

EDO mode

Page Program Time: 400us (Typ.)

700us (Max.)

Block Erase Time: 3 ms (Typ.)

10ms (Max.)

Page copy

ORDERING INFORMATION

Product ID

Speed

25 ns

Package

48 pin TSOPI

63 ball BGA

67 ball BGA

Comments

Pb-free

F59L2G81KA -25TG2N

F59L2G81KA -25BG2N

Pb-free

F59L2G81KA -25BCG2N 25 ns

Pb-free

GENERAL DESCRIPTION

The device has two 2176-byte static registers which allow program and read data to be transferred between the register

and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128Kbytes

+ 8Kbytes).

The device is a memory device which utilizes the I/O pins for both address and data input/output as well as command

inputs. The Erase and Program operations are automatically executed making the device most suitable for applications

such as solid state file storage, voice recording, image file memory for still cameras and other systems which require high

density non-volatile memory data storage.

Elite Semiconductor Memory Technology Inc.

Publication Date: Dec. 2019

Revision: 0.2 1/60

12 3 4 5 6 7...60

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