Datasheet > F59D1G81MB-45BG2M

F59D1G81MB-45BG2M

更新时间： 2024-01-27 19:00:52

品牌	Logo	应用领域
晶豪 - ESMT		/
页数	文件大小	规格书
54页	2026K
描述
1 Gbit (128M x 8/ 64M x 16) 1.8V NAND Flash Memory

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F59D1G81MB-45BG2M 数据手册

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ESMT

F59D1G81MB / F59D1G161MB (2M)

Flash

1 Gbit (128M x 8/ 64M x 16)

1.8V NAND Flash Memory

FEATURES



Voltage Supply: 1.8V (1.7 V ~ 1.95V)



Hardware Data Protection

- Program/Erase Lockout During Power Transitions



Organization

Reliable CMOS Floating Gate Technology

- ECC Requirement: x8 - 4bit/512Byte,

x16 - 4bit/256Word

- Endurance: 100K Program/Erase Cycles

- Data Retention: 10 Years

Command Register Operation

Automatic Page 0 Read at Power-Up Option

- Boot from NAND support

x8:

- Memory Cell Array: (128M + 4M) x 8bit

- Data Register: (2K + 64) x 8bit

x16:

- Memory Cell Array: (64M + 2M) x 16bit

- Data Register: (1K + 32) x 16bit



Automatic Program and Erase

x8:

- Automatic Memory Download

NOP: 4 cycles

- Page Program: (2K + 64) Byte

- Block Erase: (128K + 4K) Byte

x16:

- Page Program: (1K + 32) Word

- Block Erase: (64K + 2K) Word



Cache Program/Read Operation for High Performance

Program

Cache Read Operation

Copy-Back Operation

EDO mode



Page Read Operation

- Page Size: (2K + 64) Byte (x8)

- Random Read: 25us (Max.)

- Serial Access: 45ns (Min.)

x16

Bad-Block-Protect

One Time Program (OTP) Operation

-Page Size: (1K + 32) Word (x16)



Memory Cell: 1bit/Memory Cell

Fast Write Cycle Time

- Program time: 300us (Typ.)

- Block Erase time: 4ms (Typ.)



Command/Address/Data Multiplexed I/O Port

ORDERING INFORMATION

Product ID

Speed

Package

Comments

x8:

F59D1G81MB -45TG2M

F59D1G81MB-45BUG2M

F59D1G81MB -45BG2M

F59D1G81MB-45BCG2M

x16:

45 ns

48 pin TSOPI

48 ball BGA

63 ball BGA

67 ball BGA

Pb-free

F59D1G161MB-45TG2M

F59D1G161MB-45BG2M

45 ns

48 pin TSOPI

63 ball BGA

Pb-free

Elite Semiconductor Memory Technology Inc.

Publication Date: Nov. 2018

Revision: 1.1 1/54

12 3 4 5 6 7...54

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