Datasheet > F59D4G81KA-45BG2R

F59D4G81KA-45BG2R

更新时间： 2024-09-25 02:51:35

品牌	Logo	应用领域
晶豪 - ESMT		/
页数	文件大小	规格书
50页	1319K
描述
4 Gbit (512M x 8) 1.8V NAND Flash Memory

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ESMT

(Preliminary)

F59D4G81KA (2R)

Flash

4 Gbit (512M x 8)

1.8V NAND Flash Memory

FEATURES



Voltage Supply



1bit/cell

Command/Address/Data Multiplexed DQ Port

Hardware Data Protection

Program/Erase Lockout During Power Transitions

Reliable CMOS Floating Gate Technology

V_CC: 1.8V (1.7 V ~ 1.95V)

Organization

Page Size: (4K + 256) bytes



Data Register: (4K + 256) bytes

Block Size: 64Pages = (256K + 16K) bytes

Number of Planes: 1

Compliant to JESD47K Specifications

ECC Requirement: 8bit / 512Byte

Endurance: 60K-P/E Cycle Times

Number of Block per Die (LUN)= 2048



Automatic Program and Erase

Uncycled Data Retention: 10year of real time use at 55°C



Command Register Operation

Number of partial program cycles in the same page (NOP): 4

Automatic Page 0 Read at Power-Up Option

Page Program: (4K + 256) bytes

Block Erase: (256K + 16K) bytes



ONFI 1.0 compliant

Page Read Operation

Boot from NAND support

Automatic Memory Download

Random Read: 25us (Max.)

Read Cycle: 45ns



Cache Program Operation for High Performance Program

Cache Read Operation

Copy-Back Operation

EDO mode



Write Cycle Time

Page Program Time: 400us (Typ.)

700us (Max.)

Block Erase Time: 3.5 ms (Typ.)

10ms (Max.)

Page copy

ORDERING INFORMATION

Product ID

Speed

45 ns

Package

48 pin TSOPI

63 ball BGA

67 ball BGA

Comments

Pb-free

F59D4G81KA -45TG2R

F59D4G81KA -45BG2R

F59D4G81KA -45BCG2R

Pb-free

GENERAL DESCRIPTION

The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory

cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256Kbytes + 16Kbytes).

The device is a memory device which utilizes the I/O pins for both address and data input/output as well as command inputs. The

Erase and Program operations are automatically executed making the device most suitable for applications such as solid state file

storage, voice recording, image file memory for still cameras and other systems which require high density non-volatile memory data

storage.

Elite Semiconductor Memory Technology Inc.

Publication Date: Jan. 2020

Revision: 0.1 1/50

12 3 4 5 6 7...50

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