Datasheet > F475R06W1E3

F475R06W1E3

更新时间： 2024-09-18 12:54:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	795K
描述
Technische Information

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

F475R06W1E3 数据手册

TechnischeꢀInformationꢀ/ꢀTechnicalꢀInformation

IGBT-Module

IGBT-modules

F4-75R06W1E3

EasyPACKꢀModulꢀmitꢀTrench/FeldstoppꢀIGBT3ꢀundꢀEmitterꢀControlledꢀ3ꢀDiodeꢀundꢀNTC

EasyPACKꢀmoduleꢀwithꢀTrench/FieldstopꢀIGBT3ꢀandꢀEmitterꢀControlledꢀ3ꢀdiodeꢀandꢀNTC

V_CES= 600V

I_{C nom}= 75A / I_CRM= 150A

TypischeꢀAnwendungen

• Hilfsumrichter

TypicalꢀApplications

• AuxiliaryꢀInverters

• InduktivesꢀErwärmenꢀundꢀSchweißen

• SolarꢀAnwendungen

• USV-Systeme

• InductiveꢀHeatingꢀandꢀWelding

• SolarꢀApplications

• UPSꢀSystems

ElektrischeꢀEigenschaften

• NiederinduktivesꢀDesign

• NiedrigeꢀSchaltverluste

• TrenchꢀIGBTꢀ3

ElectricalꢀFeatures

• Lowꢀinductiveꢀdesign

• LowꢀSwitchingꢀLosses

• TrenchꢀIGBTꢀ3

• NiedrigesꢀV_CEsat

• LowꢀV_CEsat

MechanischeꢀEigenschaften

MechanicalꢀFeatures

• Al₂O₃Substrat mit kleinem thermischen

• Al₂O₃ꢀSubstrateꢀwithꢀLowꢀThermalꢀResistance

Widerstand

• KompaktesꢀDesign

• Compactꢀdesign

• Lötverbindungstechnik

• SolderꢀContactꢀTechnology

• Robuste Montage durch integrierte

• Rugged mounting due to integrated mounting

Befestigungsklammern

clamps

ModuleꢀLabelꢀCode

BarcodeꢀCodeꢀ128

ContentꢀofꢀtheꢀCode

ModuleꢀSerialꢀNumber

ꢀDigit

ꢀꢀ1ꢀ-ꢀꢀꢀ5

ꢀꢀ6ꢀ-ꢀ11

12ꢀ-ꢀ19

20ꢀ-ꢀ21

22ꢀ-ꢀ23

ModuleꢀMaterialꢀNumber

ProductionꢀOrderꢀNumber

Datecodeꢀ(ProductionꢀYear)

Datecodeꢀ(ProductionꢀWeek)

DMXꢀ-ꢀCode

preparedꢀby:ꢀDK

approvedꢀby:ꢀMB

dateꢀofꢀpublication:ꢀ2013-10-03

revision:ꢀ3.0

ULꢀapprovedꢀ(E83335)

12 3 4 5 6 7...9

中文翻译

下载PDF

与F475R06W1E3相关器件

型号	品牌	获取价格	描述	数据表
F4-75R06W1E3	INFINEON	获取价格	EasyPACK module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode and PressFIT /
F4-75R07W1H3_B11A	INFINEON	获取价格	Insulated Gate Bipolar Transistor
F475R07W1H3B11ABOMA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
F475R07W2H3B51BOMA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 650V V(BR)CES, N-Channel, MODULE-28
F475R07W2H3B51BPSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
F4-75R12KS4	EUPEC	获取价格	IGBT-inverter
F4-75R12KS4	INFINEON	获取价格	EconoPACK™ 2 1200V 四单元 IGBT 模块，采用支持高频开关的第二代快速
F4-75R12KS4_B11	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PA
F475R12KS4B11BOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PA
F4-75R12MS4	INFINEON	获取价格	EconoDUAL?2 Modul mit schnellem IGBT2 für hoc