TechnischeꢀInformationꢀ/ꢀTechnicalꢀInformation
IGBT-Module
IGBT-modules
F4-75R12KS4
VorläufigeꢀDaten
PreliminaryꢀData
IGBT,Wechselrichterꢀ/ꢀIGBT,Inverter
HöchstzulässigeꢀWerteꢀ/ꢀMaximumꢀRatedꢀValues
Kollektor-Emitter-Sperrspannung
Collector-emitterꢀvoltage
Tvj = 25°C
VCES
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
1200
ꢀ
ꢀ
ꢀ
V
Kollektor-Dauergleichstrom
ContinuousꢀDCꢀcollectorꢀcurrent
TC = 65°C, Tvj max = 150°C
TC = 25°C, Tvj max = 150°C
IC nom
IC
75
100
A
A
PeriodischerꢀKollektor-Spitzenstrom
Repetitiveꢀpeakꢀcollectorꢀcurrent
tP = 1 ms
ICRM
Ptot
150
500
A
Gesamt-Verlustleistung
Totalꢀpowerꢀdissipation
TC = 25°C, Tvj max = 150
ꢀ W
Gate-Emitter-Spitzenspannung
Gate-emitterꢀpeakꢀvoltage
ꢀ
VGES
+/-20
ꢀ
V
CharakteristischeꢀWerteꢀ/ꢀCharacteristicꢀValues
min. typ. max.
Kollektor-Emitter-Sättigungsspannung
Collector-emitterꢀsaturationꢀvoltage
IC = 75 A, VGE = 15 V
IC = 75 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
3,20 3,75
3,85
V
V
VCE sat
VGEth
QG
Gate-Schwellenspannung
Gateꢀthresholdꢀvoltage
IC = 3,00 mA, VCE = VGE, Tvj = 25°C
VGE = -15 V ... +15 V
4,5
5,5
0,80
5,0
5,10
0,30
ꢀ
6,5
V
µC
Ω
Gateladung
Gateꢀcharge
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
InternerꢀGatewiderstand
Internalꢀgateꢀresistor
Tvj = 25°C
RGint
Cies
Eingangskapazität
Inputꢀcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
VCE = 0 V, VGE = 20 V, Tvj = 25°C
nF
nF
Rückwirkungskapazität
Reverseꢀtransferꢀcapacitance
Cres
ICES
IGES
td on
Kollektor-Emitter-Reststrom
Collector-emitterꢀcut-offꢀcurrent
5,0 mA
Gate-Emitter-Reststrom
Gate-emitterꢀleakageꢀcurrent
ꢀ
400 nA
µs
Einschaltverzögerungszeit,ꢀinduktiveꢀLast
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload
IC = 75 A, VCE = 600 V
VGE = ±15 V
RGon = 7,5 Ω
Tvj = 25°C
Tvj = 125°C
0,12
0,13
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
µs
Anstiegszeit,ꢀinduktiveꢀLast
Riseꢀtime,ꢀinductiveꢀload
IC = 75 A, VCE = 600 V
VGE = ±15 V
RGon = 7,5 Ω
Tvj = 25°C
Tvj = 125°C
0,05
0,06
µs
µs
tr
td off
tf
Abschaltverzögerungszeit,ꢀinduktiveꢀLast
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload
IC = 75 A, VCE = 600 V
VGE = ±15 V
RGoff = 7,5 Ω
Tvj = 25°C
Tvj = 125°C
0,31
0,36
µs
µs
Fallzeit,ꢀinduktiveꢀLast
Fallꢀtime,ꢀinductiveꢀload
IC = 75 A, VCE = 600 V
VGE = ±15 V
RGoff = 7,5 Ω
Tvj = 25°C
Tvj = 125°C
0,02
0,03
µs
µs
EinschaltverlustenergieꢀproꢀPuls
Turn-onꢀenergyꢀlossꢀperꢀpulse
IC = 75 A, VCE = 600 V, LS = 30 nH
VGE = ±15 V
RGon = 7,5 Ω
Tvj = 25°C
Tvj = 125°C
mJ
mJ
Eon
Eoff
9,00
3,80
AbschaltverlustenergieꢀproꢀPuls
Turn-offꢀenergyꢀlossꢀperꢀpulse
IC = 75 A, VCE = 600 V, LS = 30 nH
VGE = ±15 V
RGoff = 7,5 Ω
Tvj = 25°C
Tvj = 125°C
mJ
mJ
ꢀ
ꢀ
Kurzschlußverhalten
SCꢀdata
VGE ≤ 15 V, VCC = 900 V
VCEmax = VCES -LsCE ·di/dt
ISC
ꢀ
ꢀ
tP ≤ 10 µs, Tvj = 125°C
450
A
Wärmewiderstand,ꢀChipꢀbisꢀGehäuse
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
proꢀIGBTꢀ/ꢀperꢀIGBT
RthJC
Tvj op
ꢀ
0,25 K/W
125 °C
TemperaturꢀimꢀSchaltbetrieb
Temperatureꢀunderꢀswitchingꢀconditions
ꢀ
-40
ꢀ
preparedꢀby:ꢀMK
approvedꢀby:ꢀRS
dateꢀofꢀpublication:ꢀ2013-10-03
revision:ꢀ2.0
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