Datasheet > FLL120MK

FLL120MK

更新时间： 2024-01-26 15:26:58

品牌	Logo	应用领域
EUDYNA		晶体晶体管放大器局域网
页数	文件大小	规格书
4页	101K
描述
L-Band Medium & High Power GaAs FET

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技术参数
数据手册

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FLL120MK 技术参数

生命周期：	Obsolete	包装说明：	,
针数：	2	Reach Compliance Code：	compliant
风险等级：	5.02	FET 技术：	METAL SEMICONDUCTOR
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
功耗环境最大值：	37.5 W	子类别：	Other Transistors
Base Number Matches：	1

FLL120MK 数据手册

FLL120MK

L-Band Medium & High Power GaAs FET

FEATURES

• High Output Power: P

= 40.0dBm (Typ.)

1dB

• High Gain: G

= 10.0dB (Typ.)

1dB

= 40% (Typ.)

• High PAE: η

add

• Proven Reliability

• Hermetically Sealed Package

DESCRIPTION

The FLL120MK is a Power GaAs FET that is specifically designed to

provide high power at L-Band frequencies with gain, linearity and

efficiency superior to that of silicon devices. The performance in

multitone environments for Class AB operation make them ideally

suited for base station applications.

Fujitsu’s stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Item

Symbol

Condition

Unit

Rating

Drain-Source Voltage

Gate-Source Voltage

-5

T = 25°C

Total Power Dissipation

Storage Temperature

Channel Temperature

37.5

-65 to +175

175

°C

stg

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

1. The drain-source operating voltage (V ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 26.8 and -5.8 mA respectively with

gate resistance of 50Ω.

3. The operating channel temperature (T ) should not exceed 145°C.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Limit

Typ.

Item

Symbol

Test Conditions

Unit

Min.

Max.

= 5V, V

= 0V

Saturated Drain Current

Transconductance

4000 6000

DSS

= 5V, I

= 2400mA

=240mA

2000

Pinch-off Voltage

= 5V, I

-1.0

-2.0 -3.5

Gate Source Breakdown Voltage

= -240µA

-5

GSO

Output Power at 1dB G.C.P.

1dB

39.5 40.0

dBm

= 10V

= 0.55 I

DSS (Typ.),

Power Gain at 1dB G.C.P.

Power-added Efficiency

9.0

10.0

1dB

f = 2.3GHz

add

4.0

Thermal Resistance

Channel to Case

3.3

°C/W

G.C.P.: Gain Compression Point

CASE STYLE: MK

Edition 1.1

July 1999

12 3 4

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