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ES1G-LT-TP PDF预览

ES1G-LT-TP

更新时间: 2024-01-31 23:46:50
品牌 Logo 应用领域
美微科 - MCC 超快速恢复二极管光电二极管
页数 文件大小 规格书
3页 127K
描述
Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon, DO-214AC, SMA, 2 PIN

ES1G-LT-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DO-214AC
包装说明:SMA, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.28
应用:SUPER FAST RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.25 VJEDEC-95代码:DO-214AC
JESD-30 代码:R-PDSO-C2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:30 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:400 V
最大反向电流:5 µA最大反向恢复时间:0.035 µs
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:C BEND端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

ES1G-LT-TP 数据手册

 浏览型号ES1G-LT-TP的Datasheet PDF文件第2页浏览型号ES1G-LT-TP的Datasheet PDF文件第3页 
ES1A-LT  
THRU  
ES1J-LT  
M C C  
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ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
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ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
TM  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Micro Commercial Components  
Features  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
1 Amp Super Fast  
Recovery Rectifier  
RoHS Compliant. See ordering information)  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
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Case Material:Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
Built-in strain relief  
Super fast switching speed under 35ns  
Marking : Cathode band and type number (No '-LT' Suffix)  
x
x
x
50 to 600 Volts  
Maximum Ratings  
DO-214AC  
(SMA) (LEAD FRAME)  
Operating Temperature: -65R to +175R  
Storage Temperature: -65R to +175R  
H
MCC  
Part Number  
Maximum  
Recurrent  
Maximum DC  
Blocking  
Maximum  
Peak Reverse RMS Voltage  
Voltage  
Voltage  
J
ES1A-LT  
ES1B-LT  
ES1D-LT  
ES1G-LT  
ES1J-LT  
50V  
35V  
70V  
140V  
280V  
420V  
50V  
100V  
200V  
400V  
600V  
100V  
200V  
400V  
600V  
A
C
E
Electrical Characteristics @ 25°C Unless Otherwise Specified  
D
B
F
Average Forward  
Current  
IF(AV)  
1.0A  
TA= 55R  
G
Peak Forward Surge  
Current  
Maximum  
Instantaneous  
Forward Voltage  
ES1A-LT-ES1D-LT  
ES1G-LT  
IFSM  
30A  
8.3ms, half sine  
DIMENSIONS  
INCHES  
MIN  
.079  
.050  
.002  
---  
MM  
MIN  
DIM  
A
MAX  
.096  
.064  
.008  
.02  
MAX  
2.44  
1.63  
.20  
NOTE  
2.00  
1.27  
.05  
B
C
D
E
---  
.51  
.030  
.065  
.189  
.157  
.090  
.060  
.091  
.220  
.181  
.115  
.76  
1.52  
2.32  
5.59  
4.60  
2.92  
VF  
.95V  
1.25V  
1.70V  
IFM = 1.0A;  
F
1.65  
4.80  
4.00  
2.25  
G
H
J
ES1J-LT  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
SUGGESTED SOLDER  
PAD LAYOUT  
IR  
TA = 25R  
TA = 100R  
5µA  
80µA  
0.090”  
Maximum Reverse  
Recovery Time  
Typical Junction  
Capacitance  
Trr  
CJ  
35ns  
15pF  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
Measured at  
0.085”  
1.0MHz, VR=4.0V  
Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex Notes 7.  
0.070”  
www.mccsemi.com  
1 of 3  
Revision: 4  
2009/01/09  

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