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ES1GQ PDF预览

ES1GQ

更新时间: 2024-11-19 15:18:15
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
5页 250K
描述
SMA

ES1GQ 数据手册

 浏览型号ES1GQ的Datasheet PDF文件第2页浏览型号ES1GQ的Datasheet PDF文件第3页浏览型号ES1GQ的Datasheet PDF文件第4页浏览型号ES1GQ的Datasheet PDF文件第5页 
RoHS  
ES1AQ THRU ES1JQ  
COMPLIANT  
Surface Mount Super Fast Recovery Rectifier  
Features  
● Low profile package  
● Ideal for automated placement  
● Glass passivated chip junction  
● High forward surge capability  
● Super Fast reverse recovery time  
● Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
● Part no. with suffix “Q” means AEC-Q101 qualified  
Typical Applications  
For use in high frequency rectification of power supplies,  
inverters, converters, and freewheeling diodes for consumer,  
automotive and telecommunication.  
Mechanical Data  
ackage: DO-214AC (SMA)  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, halogen-free  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Cathode line denotes the cathode end  
Polarity:  
(T =25Unless otherwise specified)  
Maximum Ratings  
a
ES1AQ ES1BQ ES1CQ ES1DQ ES1FQ ES1GQ ES1HQ ES1JQ  
PARAMETER  
SYMBOL UNIT  
ES1A  
50  
ES1B  
100  
ES1C  
150  
ES1D  
200  
ES1F  
300  
ES1G  
400  
ES1H  
500  
ES1J  
600  
Device marking code  
VRRM  
IO  
V
A
Repetitive peak reverse voltage  
Average rectified output current  
@ 60Hz sine wave, Resistance load, TL (Fig.1)  
1.0  
30  
Surge(non-repetitive)forward current  
@ 60Hz Half-sine wave,1 cycle, Ta=25℃  
IFSM  
Tstg  
TJ  
A
-55~+150  
-55~+150  
Storage temperature  
Junction temperature  
(T =25Unless otherwise specified)  
Electrical Characteristics  
a
TEST  
CONDITIONS  
ES1AQ ES1BQ ES1CQ ES1DQ ES1FQ ES1GQ ES1HQ ES1JQ  
PARAMETER  
SYMBOL  
UNIT  
Maximum instantaneous  
forward voltage drop per diode  
VF  
TRR  
CJ  
V
IFM=1.0A  
0.95  
21  
1.3  
1.7  
IF=0.5A,IR=1.0A,  
Irr=0.25A  
Maximum reverse recovery time  
Typical junction capacitance  
ns  
35  
pF VR=4V,f=1MHz  
13  
Ta=25℃  
μA  
5
Maximum DC reverse current at  
rated DC blocking voltage per diode  
@ VRM=VRRM  
IRRM  
Ta=125℃  
100  
1 / 5  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
S-S3197  
Rev.1.5,21-Nov-22  
www.21yangjie.com  

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