ES1AF THRU ES1JF
HD AF46
SMAF Plastic-Encapsulate Diodes
Super Fast Recovery Rectifier Diode
Features
●I
1A
o
SMAF
●VRRM
50V-600V
●High surge current capability
Glass passivated chip
●
●
Polarity: Color band denotes cathode
Applications
●Rectifier
Marking
● ES1AF-ES1JF : ES1A-ES1J
ES1
AF BF CF DF EF GF HF
Item
Symbol Unit
Test Conditions
JF
VRRM
V
Repetitive Peak Reverse Voltage
50 100 150 200 300 400 500 600
35 70 105 140 210 280 350 420
V
V
RMS
Maximum RMS Voltage
60HZ Half-sine wave, Resistance
load, TL=120℃
IF(AV)
A
A
1.0
Average Forward Current
Surge(Non-repetitive)Forward
Current
60Hz Half-sine wave ,1 cycle ,
Ta =25℃
IFSM
30
TJ
℃
℃
-55~+150
Junction Temperature
Storage Temperature
TSTG
-55 ~ +150
Electrical Characteristics (T=25℃ Unless otherwise specified)
ES1
Symbol
Item
Unit
V
Test Condition
JF
AF BF CF DF EF GF HF
VF
IF =1.0A
0.95
1.25
1.70
Peak Forward Voltage
Maximum reverse recovery
time
ns
I =0.5A,I =1.0A,I
trr
rr=0.25A
35
F
R
IRRM1
I
T =25℃
5
a
Peak Reverse Current
μA
V =V
RM
RRM
T =100℃
a
100
851)
351)
Rθ
Between junction and ambient
Between junction and terminal
J-A
Thermal
Resistance(Typical)
℃/W
Rθ
J-L
Notes:
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper
pad areas
1
H
igh Diode Semiconductor