Datasheet > ES1H

ES1H

更新时间： 2024-11-19 14:51:03

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1392K
描述
SMAJ

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中文翻译

获取价格

数据手册

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ES1H 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SMAJ Plastic-Encapsulate Diodes

Super Fast Recovery Rectifier Diodes

ES1A THRU ES1J

Features

SMAJ

●I_F(AV)

●VRRM

50V-600V

●High surge current capability

●

Polarity: Color band denotes cathode

Applications

●Rectifier

Marking

● ES1X

X From A To J

Limiting Values(Absolute Maximum Rating)

ES1

Item

Symbol

Unit

Test Conditions

V_RRM

Repetitive Peak Reverse Voltage

50 100

400 500 600

300

150 200

MaximumRMS Voltage

35 70 105 140 210 280 350 420

RMS

60Hz Half-sine wave，

Resistance load，Ta=75℃

Average Forward Current

1.0

I_F(AV)

Surge(Non-repetitive)Forward

Current

60Hz Half-sine wave，

1 cycle，Ta=25℃

I_FSM

Operation Junction and

Storage Temperature Range

T_J,T_STG

℃

-55 ~ +150

Electrical Characteristics (T=25℃ Unless otherwise specified）

ES1

Symbol

Unit

Test Condition

Item

V_F

I_F=1.0A

Peak Forward Voltage

0.95

1.25

1.70

Maximum reverse recovery

time

I =0.5A,I =1.0A,I

_rr=0.25A

I_RRM1

I_RRM2

T =25℃

V_RM=V_RRM

Peak Reverse Current

μA

T =100℃

100

Between junction and ambient

Between junction and terminal

R_θ

J-A

Thermal

Resistance(Typical)

℃/

R_θ

J-L

Notes:

Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper

pad areas

www.jscj-elec.com

Rev. - 1.1

12 3 4

中文翻译

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