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ES1H

更新时间: 2024-02-05 16:08:11
品牌 Logo 应用领域
TSC 二极管光电二极管
页数 文件大小 规格书
2页 48K
描述
1.0 AMP. Super Fast Surface Mount Rectifiers

ES1H 技术参数

生命周期:Active包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.55
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-PALF-W2
元件数量:1端子数量:2
最大输出电流:0.7 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
认证状态:Not Qualified最大反向恢复时间:1.5 µs
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

ES1H 数据手册

 浏览型号ES1H的Datasheet PDF文件第2页 
ES1A THRU ES1J  
1.0 AMP. Super Fast Surface Mount Rectifiers  
Voltage Range  
50 to 600 Volts  
Current  
1.0 Ampere  
SMA/DO-214AC  
Features  
Glass passivated junction chip  
For surface mounted application  
Low profile package  
Built-in strain relief,  
Ideal for automated placement  
Easy pick and place  
Superfast recovery time for high efficiency  
Glass passivated chip junction  
High temperature soldering:  
260OC/10 seconds at terminals  
Plastic material used carries Underwriters  
Laboratory Classification 94V-O  
.062(1.58)  
.050(1.27)  
.111(2.83)  
.090(2.29)  
.187(4.75)  
.160(4.06)  
.103(2.61)  
.078(1.99)  
.012(.31)  
.006(.15)  
Mechanical Data  
.008(.20)  
.004(.10)  
Cases: Molded plastic  
Terminals: Solder plated  
Polarity: Indicated by cathode band  
Packing: 12mm tape per E1A STD RS-481  
.056(1.41)  
.035(0.90)  
.210(5.33)  
.195(4.95)  
Weight: 0.064 gram  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
Symbol ES ES ES ES ES ES ES ES  
Type Number  
Units  
1A 1B 1C 1D 1F 1G 1H 1J  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50 100 150 200 300 400 500 600  
V
V
V
VRRM  
VRMS  
VDC  
35 70 105 140 210 280 350 420  
50 100 150 200 300 400 500 600  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
See Fig. 1  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method )  
1.0  
30  
A
A
I(AV)  
IFSM  
Maximum Instantaneous Forward Voltage  
@ 1.0A  
Maximum DC Reverse Current @ TA =25  
0.95  
10  
1.3  
1.7  
V
VF  
IR  
5.0  
100  
35  
uA  
uA  
nS  
pF  
/W  
at Rated DC Blocking Voltage @ TA=100℃  
Maximum Reverse Recovery Time ( Note 1 )  
Trr  
Cj  
RθJA  
RθJL  
Typical Junction Capacitance ( Note 2 )  
Maximum Thermal Resistance (Note 3)  
8
85  
35  
Operating Temperature Range  
Storage Temperature Range  
TJ  
-55 to +150  
TSTG  
-55 to + 150  
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
2. Measured at 1 MHz and Applied VR=4.0 Volts  
3. P.C.B. Mounted on 0.2 x 0.2”(5 x 5mm) Copper Pad Area.  
- 166 -  

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