WTE
POWER SEMICONDUCTORS
ES1A – ES1J
1.0A SURFACE MOUNT SUPER FAST RECTIFIER
Features
!
Glass Passivated Die Construction
!
!
!
!
!
!
Ideally Suited for Automatic Assembly
B
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 30A Peak
Low Power Loss
Super-Fast Recovery Time
Plastic Case Material has UL Flammability
Classification Rating 94V-O
D
A
F
C
H
G
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ E
SMA/DO-214AC
Mechanical Data
Dim
A
Min
2.50
4.00
1.40
0.152
4.80
2.00
0.051
0.76
Max
2.90
4.60
1.60
0.305
5.28
2.44
0.203
1.52
!
!
Case: Low Profile Molded Plastic
Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
B
C
!
!
!
D
E
Weight: 0.064 grams (approx.)
F
G
H
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Symbol
ES1A
ES1B
ES1C
ES1D
ES1E
ES1G
ES1J Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
150
105
200
300
210
400
280
600
420
V
RMS Reverse Voltage
VR(RMS)
IO
140
1.0
V
A
Average Rectified Output Current
@TL = 120°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30
A
Forward Voltage
@IF = 1.0A
VFM
IRM
0.95
1.25
1.7
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
5.0
500
µA
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
trr
Cj
35
10
nS
pF
RꢀJL
Tj, TSTG
35
K/W
°C
Operating and Storage Temperature Range
-65 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
ES1A – ES1J
1 of 3
© 2002 Won-Top Electronics