Datasheet > EC733317

EC733317

更新时间： 2022-02-26 12:45:10

品牌	Logo	应用领域
飞虹 - E-CMOS		/
页数	文件大小	规格书
4页	161K
描述
-30V, -7A P-Channel MOSFET

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EC733317 数据手册

EC733317

-30V、-7A P-Channel MOSFET

Description

The EC733317 uses advanced trench

technology to provide excellent RDS(ON)

and low gate charge .This device is

suitable for use as a load switch or in

PWM applications.

Features and Benefits:

◆ VDS = -30V,ID =-7A

DS(ON) < 36mꢀ @ VGS=-4.5V

DS(ON) < 18mꢀ @ VGS=-10V

◆ High Power and current handing capability

◆ Lead free product is acquired

◆ Surface Mount Package

Application

◆

PWM applications

Load switch

Power management

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

-30

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

±25

(25℃)

(70℃)

-7

Drain Current-Continuous@ Current-Pulsed (Note 1)

-5.5

IDM

-40

Maximum Power Dissipation

3.1

℃

Operating Junction and Storage Temperature Range

,TSTG

-55 To 150

Thermal Resistance

Parameter

Symbol

Limit

Unit

Thermal Resistance,Junction-to-Ambient (Note 2)

θJA

℃/W

E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 4

5A16N-Rev.F001

12 3 4

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