Datasheet > EC733615M1R

EC733615M1R

更新时间： 2024-01-31 19:17:28

品牌	Logo	应用领域
飞虹 - E-CMOS		/
页数	文件大小	规格书
6页	312K
描述
-30V, -10A P-Channel MOSFET

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EC733615M1R 数据手册

EC733615

-30V、-10A P-Channel MOSFET

Description

The EC733615 uses advanced trench

technology to provide excellent RDS(ON)

and low gate charge .This device is

suitable for use as a load switch or in

PWM applications.

Features and Benefits:

◆ VDS = -30V,ID =-10A

DS(ON) < 25mꢀ @ VGS=-4.5V

DS(ON) < 14mꢀ @ VGS=-10V

◆ High Power and current handing capability

◆ Lead free product is acquired

◆ Surface Mount Package

Pin Assignment

Application

◆

PWM applications

Load switch

Power management

Absolute Maximum Ratings (TA=25ꢀunless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

-30

±25

(25℃)

(70℃)

-8

-6

Drain Current-Continuous@ Current-Pulsed (Note 1)

IDM

-80

Maximum Power Dissipation

3.1

℃

Operating Junction and Storage Temperature Range

,TSTG

-55 To 150

Thermal Resistance

ꢀ/W

Thermal Resistance, Junction-Ambient (Note 2)

θJA

E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 6

4K25N-Rev.F001

12 3 4 5 6

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