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EC736014DA4R PDF预览

EC736014DA4R

更新时间: 2024-01-15 22:14:10
品牌 Logo 应用领域
飞虹 - E-CMOS /
页数 文件大小 规格书
7页 368K
描述
60V ,60A N-Channel

EC736014DA4R 数据手册

 浏览型号EC736014DA4R的Datasheet PDF文件第2页浏览型号EC736014DA4R的Datasheet PDF文件第3页浏览型号EC736014DA4R的Datasheet PDF文件第4页浏览型号EC736014DA4R的Datasheet PDF文件第5页浏览型号EC736014DA4R的Datasheet PDF文件第6页浏览型号EC736014DA4R的Datasheet PDF文件第7页 
EC736014D  
60V 60A N-Channel  
Description  
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive  
avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power  
switching application and a wide variety of other applications.  
Features and Benefits:  
Advanced MOSFET process technology  
Special designed for PWM, load switching and  
general purpose applications  
Ultra low on-resistance with low gate charge  
Fast switching and reverse body recovery  
175operating temperature  
Main Product Characteristics  
60V  
12m(typ.)  
60A  
V
DSS  
R
DS(on)  
I
D
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
60  
Units  
ID  
@ TC = 25°C  
Continuous Drain Current, V GS @ 10V  
A
ID  
@ TC = 100°C  
Continuous Drain Current, V GS @ 10V  
42  
IDM  
Pulsed Drain Current  
240  
Power Dissipation  
115  
W
W/°C  
V
PD @TC = 25°C  
Linear Derating Factor  
Drain-Source Voltage  
Gate-to-Source Voltage  
0.74  
60  
V
DS  
GS  
V
± 20  
235  
V
E
AS  
AS  
STG  
Single Pulse Avalanche Energy @ L=0.3mH  
Avalanche Current @ L=0.3mH  
mJ  
A
I
39  
T
J
T
Operating Junction and Storage Temperature Range  
-55 to + 175  
°C  
E-CMOS Corp. (www.ecmos.com.tw)  
Page 1 of 7  
5A21N-Rev.F001  

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