Datasheet > EC744N70

EC744N70

更新时间： 2024-02-09 20:34:26

品牌	Logo	应用领域
飞虹 - E-CMOS		/
页数	文件大小	规格书
5页	468K
描述
700V,4A N-Channel Power MOSFET

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EC744N70 数据手册

EC744N70

700V,4A N-Channel Power MOSFET

Features

◆ 700V, 4A, R_DS(ON)(Max.) = 2.7Ω @ VGS = 10V

◆ Low Crss

◆ Fast Switching

◆ 100 % Avalanche Tested

Applications

 Charger

 Standby Power.

ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted)

Limit

Symbol

Parameter

Drain-Source Voltage ^a

Unit

TO-220F TO-251

700

± 30

VDS

VGS

Gate-Source Voltage

Drain Current-Continuous, TC =25°C

Drain Current-Continuous, TC =100°C

Drain Current-Pulsed ^b

2.53

IDM

54.3

°C

Maximum Power Dissipation @ TJ =25°C

Single Pulsed Avalanche Energy ^e

Operating and Store Temperature Range

242

-55 to 150

EAS

TJ, TSTG

Thermal Characteristics

E-CMOS Corp. (www.ecmos.com.tw)

Page 1 of 5

4J03N-Rev.F001

12 3 4 5

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